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4N40G-TA3-T Datasheet(PDF) 2 Page - Unisonic Technologies |
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4N40G-TA3-T Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 3 page 4N40 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-550.b ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Continuous (TC=25°C) ID 4 A Drain Current Pulsed (Note 1) IDM 8 A Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns TO-220 60 W Power Dissipation TO-220F 27 W TO-220 0.48 W/°C Derate above 25°C TO-220F PD 0.22 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W TO-220 2.08 Junction to Case TO-220F θJC 4.5 °C/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 400 V Drain-Source Leakage Current IDSS VDS=400V, VGS=0V 1 µA Forward VGS=+30V, VDS=0V +100 nA Gate- Source Leakage Current Reverse IGSS VGS=-30V, VDS=0V -100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4A 1.2 1.5 Ω DYNAMIC PARAMETERS Input Capacitance CISS 750 pF Output Capacitance COSS 150 pF Reverse Transfer Capacitance CRSS VGS=0V, VDS=25V, f=1.0MHz 100 pF SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) 12 45 ns Rise Time tR 42 60 ns Turn-OFF Delay Time tD(OFF) 130 200 ns Fall-Time tF VDD=200V, ID=4A, RG=25Ω (Note 2, 3) 62 100 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=2A, VGS=0V 1.4 V Body Diode Reverse Recovery Time trr IS=4A, VGS=0V, dIF/dt=100A/µs(Note 2) 800 ns Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 3. Essentially independent of operating temperature |
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