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ILD610 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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ILD610 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
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5–1 FEATURES • Dual Version of SFH610 Series • High Current Transfer Ratios ILD610-1, 40-80% ILD610-2, 63-125% ILD610-3, 100-200% ILD610-4, 160-320% • Isolation Test Voltage, 5300 VRMS •VCEsat 0.25 (≤0.4) V at IF=10 mA, IC=2.5 mA •VCEO=70 V • Underwriters Lab File #E52744 • VDE #0884 Available with Option 11 DESCRIPTION The ILD610 Series is a dual channel optocoupler series for high density applications. Each channel consists of an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN pho- totransistor. Signal information, including a DC level, can be transmitted by the device while main- taining a high degree of electrical isolation between input and output. The ILD610 Series is the dual ver- sion of SFH610 Series and uses a repetitive pin-out configuration instead of the more common alternat- ing pin-out used in most dual couplers. Maximum Ratings (Each Channel) Emitter Reverse Voltage .................................................6 V Surge Forward Current (t £10 ms)...................1.5 A Total Power Dissipation ..............................100 mW Derate Linearly from 25 °C......................1.3 mW/°C DC Forward Current ......................................60 mA Detector Collector-Emitter Voltage ..................................70 V Collector Current ..........................................50 mA Collector Current (t ≤1 ms)..........................100 mA Total Power Dissipation ..............................150 mW Derate Linearly from 25 °C......................2.0 mW/°C Package Isolation Test Voltage (t=1 sec.) ........ 5300 VACRMS Isolation Resistance VIO=500 V, TA=25°C ............................... ≥10 12 Ω VIO=500 V, TA=100°C ............................. ≥10 11 Ω Storage Temperature ...................–55 °C to +150°C Operating Temperature ...............–55 °C to +100°C Junction Temperature ................................... 100 °C Lead Soldering Time at 260 °C .................... 10 sec. V DE Electrical Characteristics (TA=25°C) Symbol Typ. Unit Condition Emitter Forward Voltage VF 1.25 ( ≤1.65) VIF=60mA Reverse Current IR 0.01 ( ≤10) µAV R=6V Capacitance CO 25 pF VR=0 V, f=1 MHz Detector Breakdown Voltage Collector-Emitter Emitter-Collector BVCEO BVCEO 90 ( ≥70) 7.0 ( ≥6.0) V V IC=10 µA IE=10 µA Collector-Emitter Dark Current ICEO 2 ( ≤50) nA VCE=10 V Capacitance CCE 7pF VCE=5 V, f=1 MHz Package Collector-Emitter Saturation Voltage VCEsat 0.25 ( ≤0.40) VIF=10 mA, IC=2.5 mA Coupling Capacitance CC 0.35 pF Dimensions in inches (mm) Pin One I.D. .268 (6.81) .255 (6.48) 3 4 6 5 .390 (9.91) .379 (9.63) .045 (1.14) .030 (.76) 4 ° Typ. .100 (2.54) Typ. 10 ° Typ. 3 °–9° .305 Typ. (7.75) Typ. .022 (.56) .018 (.46) .012 (.30) .008 (.20) .135 (3.43) .115 (2.92) 1 2 8 7 .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) 8 7 6 5 Emitter Collector Emitter Collector Anode Cathode Anode Cathode 1 2 3 4 ILD610 SERIES DUAL PHOTOTRANSISTOR OPTOCOUPLER |
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