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ILQ31 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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ILQ31 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
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2 / 3 page  5–2 IL/D/Q30/31/55 Electrical Characteristics (TA=25°C) Symbol Min. Typ. Max.. Unit Condition GaAs Emitter (per channel) Forward Voltage VF 1.25 1.5 V IF=20 mA Reverse Current IR 0.1 10 µAV R=3.0 V Capacitance CO 25 pF VR=0 V Detector (per channel) Collector-Emitter Breakdown Voltage BVCEO 30/55 V IC=100 µA Collector-Emitter Leakage Current ICEO 1.0 100 nA VCE=10 V, IF=0 Collector-Emitter Capacitance CCE 3.4 pF VCE=10 V, f=1 MHz Package Current Transfer Ratio IL/D/Q30/55 IL/D/Q31 CTR 100 200 400 400 % % IF=10 mA,VCE=5 V IF=10 mA,VCE=5 V Collector-Emitter Saturation Voltage VCEsat 0.9 1.0 V IC=50 mA, IF=50 mA Isolation Test Voltage 5300 VACRM S Isolation Resistance RISOL 1012 W Coupling Capacitance CISOL 0.5 pF Rise Time tR 10 µsV CC=13.5 V, IF=50 mA, RL=100 Ω Fall Time tF 35 µs Figure 1. Forward voltage versus forward current Figure 2. Normalized non-saturated and saturated CTRce at TA=25°C versus LED current 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 IF - Forward Current - mA Ta = -55 °C Ta = 25 °C Ta = 85 °C .1 1 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Vce =1V Vce = 5V IF - LED Current - mA Vce = 5 V IF = 10 mA Ta = 25 °C Normalized to: Figure 3. Normalized non-saturated and saturated collector-emitter current versus LED current Figure 4. Normalized collector-base photocurrent versus LED current 100 10 1 .1 .001 .01 .1 1 10 Vce = 1V Vce = 5 V IF - LED Current - mA Ta = 25 °C IF = 10 mA Vce = 5 V Normalized to: .1 1 10 100 .001 .01 .1 1 10 IF - LED Current - mA Ta = 25 °C Vcb = 3.5 V IF = 10 mA Normalized to: |
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