1N50

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-548.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

±30

V

1.3 (Note 2)

A

Drain Current

Pulsed (Note 3)

5 (Note 2)

A

Avalanche Current (Note 3)

1.3

A

Single Pulsed (Note 4)

113

mJ

Avalanche Energy

Repetitive (Note 5)

2.6

mJ

Power Dissipation

40

W

Derate above 25°C

0.32

W/°C

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Drain current limited by maximum junction temperature

3. Repetitive Rating: Pulse width limited by maximum junction temperature

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

3.13

°C/W