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IL215A Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. IL215A
Description  PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

IL215A Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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5–1
• FEATURES
• High Current Transfer Ratio, IF=1 mA
IL215A—20% Minimum
IL216A—50% Minimum
IL217A—100% Minimum
• Isolation Voltage, 2500 VACRMS
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL215A/216A/217A are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information, including
a DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL215A//216A/217A
comes in a standard SOIC-8 small outline package
for surface mounting which makes it ideally suited
for high density applications with limited space. In
addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
Maximum Ratings
Emitter
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25
°C............................90 mW
Derate Linearly from 25
°C ......................1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ...............30 V
Emitter-Collector Breakdown Voltage .................7 V
Collector-Base Breakdown Voltage ..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25
°C ......................2.0 mW/°C
Package
Total Package Dissipation at 25
°C Ambient
(LED + Detector).....................................280 mW
Derate Linearly from 25
°C ......................3.3 mW/°C
Storage Temperature .................. –55
°C to +150°C
Operating Temperature .............. –55
°C to +100°C
Soldering Time at 260
°C .............................10 sec.
Characteristics (TA=25°C)
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
VF
1.0
1.5
V
IF=1 mA
Reverse Current
IR
0.1
100
µAV
R=6.0 V
Capacitance
CO
25
pF
VR=0
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
BVCEO
BVECO
30
7
V
V
IC=10 µA
IE=10 µA
Dark Current,
Collector-Emitter
ICEOdark
550
nA
VCE=10 V
IF=0
Capacitance,
Collector-Emitter
CCE
10
pF
VCE=0
Package
DC Current Transfer
Ratio
IL215A
IL216A
IL217A
CTRDC
20
50
100
50
80
130
%IF=10 mA,
VCE=5 V
Saturation Voltage,
Collector-Emitter
VCEsat
0.5
IF=1 mA,
IC=0.1 mA
Isolation Test Voltage
VIO
2500
VACRMS
Capacitance,
Input to Output
CIO
0.5
pF
Resistance,
Input to Output
RIO
100
G
Switching Time
ton,toff
3.0
µsI
C=2 mA,
RE=100 Ω,
VCE=10 V
Dimensions in inches (mm)
40
°
.240
(6.10)
.154
±.005
(3.91
±.13)
.050 (1.27)
typ.
.016 (.41)
.192
±.005
(4.88
±.13)
.004 (.10)
.008 (.20)
Lead
Coplanarity
±.0015 (.04)
max.
.015
±.002
(.38
±.05)
.008 (.20)
7
°
.058
±.005
(1.49
±.13)
.125
±.005
(3.18
±.13)
Pin One ID
.120
±.005
(3.05
±.13)
CL
.021 (.53)
5
° max.
R.010
(.25) max.
.020
±.004
(.15
±.10)
2 plcs.
1
2
3
4
Anode
Cathode
NC
NC
8
7
6
5
NC
Base
Collector
Emitter
IL215A/216A/217A
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
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