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IL212AT Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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IL212AT Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 3 page Semiconductor Group 4–4 IL211AT/IL212AT/IL213AT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER Package Dimensions in Inches (mm) TOLERANCE: ±.005 (unless otherwise noted) FEATURES • High Current Transfer Ratio IL211AT—20% Minimum IL212AT—50% Minimum IL213AT—100% Minimum • Isolation Voltage, 2500 VAC RMS • Electrical Specifications Similar to Standard 6 Pin Coupler • Industry Standard SOIC-8 Surface Mountable Package • Standard Lead Spacing, .05" • Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A) • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • Underwriters Lab File #E52744 (Code Letter P) DESCRIPTION The IL211AT/212AT/213AT are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL211AT//212AT/ 213AT comes in a standard SOIC-8 small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. A choice of 20, 50, and 100% minimum CTR at IF=10 mA makes these optocouplers suitable for a variety of different applications. Maximum Ratings Emitter Peak Reverse Voltage ....................................... 6.0 V Continuous Forward Current .......................... 60 mA Power Dissipation at 25 °C ............................. 90 mW Derate Linearly from 25 °C .......................1.2 mW/°C Detector Collector-Emitter Breakdown Voltage ................ 30 V Emitter-Collector Breakdown Voltage .................. 7 V Collector-Base Breakdown Voltage ................... 70 V Power Dissipation ........................................ 150 mW Derate Linearly from 25 °C .......................2.0 mW/°C Package Total Package Dissipation at 25 °C Ambient (LED + Detector) ...................................... 280 mW Derate Linearly from 25 °C .......................3.3 mW/°C Storage Temperature ..................... –55 °C to +150°C Operating Temperature ................. –55 °C to +100°C Soldering Time at 260 °C ............................... 10 sec. Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit Condition Emitter Forward Voltage VF 1.3 1.5 V IF=10 mA Reverse Current IR 0.1 100 µAV R=6.0 V Capacitance CO 25 pF VR=0 Detector Breakdown Voltage BVCEO 30 V IC=10 µA BVECO 7V IE=10 µA Collector-Emitter VCE=10 V, Dark Current ICEOdark 550 nA IF=0 Collector-Emitter Capacitance CCE 10 pF VCE=0 Package DC Current Transfer CTRDC %IF=10 mA VCE=5 V IL211AT 20 50 IL212AT 50 80 IL213AT 100 130 Collector-Emitter Saturation Voltage VCE sat 0.4 IF=10 mA, IC=2.0 mA Isolation Test Voltage VIO 2500 VACRMS Capacitance, Input to Output CIO 0.5 pF Resistance, Input to Output RIO 100 G Ω Switching Time tON, tOFF 3.0 µsI C=2 mA, RE=100 Ω, VCE=10 V Specifications subject to change. 40 ° .240 (6.10) .154 ±.005 (3.91 ±.13) .050 (1.27) typ. .016 (.41) .192 ±.005 (4.88 ±.13) .004 (.10) .008 (.20) Lead Coplanarity ±.0015 (.04) max. .015 ±.002 (.38 ±.05) .008 (.20) 7 ° .058 ±.005 (1.49 ±.13) .125 ±.005 (3.18 ±.13) Pin One ID .120 ±.005 (3.05 ±.13) CL .021 (.53) 5 ° max. R.010 (.25) max. .020 ±.004 (.15 ±.10) 2 plcs. 1 2 3 4 Anode Cathode NC NC 8 7 6 5 NC Base Collector Emitter 10.95 |
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Similar Description - IL212AT |
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