Semiconductor Group

4–4

IL211AT/IL212AT/IL213AT

PHOTOTRANSISTOR

SMALL OUTLINE

SURFACE MOUNT OPTOCOUPLER

Package Dimensions in Inches (mm)

TOLERANCE:

±.005 (unless otherwise noted)

FEATURES

IL211AT—20% Minimum

IL212AT—50% Minimum

IL213AT—100% Minimum

RMS

Standard 6 Pin Coupler

Mountable Package

(Conforms to EIA Standard RS481A)

and IR Reflow Soldering

(Code Letter P)

DESCRIPTION

The IL211AT/212AT/213AT are optically coupled

pairs with a Gallium Arsenide infrared LED and a

silicon NPN phototransistor. Signal information,

including a DC level, can be transmitted by the device

while maintaining a high degree of electrical isolation

between input and output. The IL211AT//212AT/

213AT comes in a standard SOIC-8 small outline

package for surface mounting which makes it ideally

suited for high density applications with limited space.

In addition to eliminating through-holes requirements,

this package conforms to standards for surface

mounted devices.

A choice of 20, 50, and 100% minimum CTR at

variety of different applications.

Maximum Ratings

Emitter

Peak Reverse Voltage ....................................... 6.0 V

Continuous Forward Current .......................... 60 mA

Power Dissipation at 25

°C ............................. 90 mW

Derate Linearly from 25

°C .......................1.2 mW/°C

Detector

Collector-Emitter Breakdown Voltage ................ 30 V

Emitter-Collector Breakdown Voltage .................. 7 V

Collector-Base Breakdown Voltage ................... 70 V

Power Dissipation ........................................ 150 mW

Derate Linearly from 25

°C .......................2.0 mW/°C

Package

Total Package Dissipation at 25

°C Ambient

(LED + Detector) ...................................... 280 mW

Derate Linearly from 25

°C .......................3.3 mW/°C

Storage Temperature ..................... –55

°C to +150°C

Operating Temperature ................. –55

°C to +100°C

Soldering Time at 260

°C ............................... 10 sec.

Symbol Min. Typ.

Max. Unit

Condition

Emitter

Forward Voltage

1.3

1.5

V

Reverse Current

0.1

100

µAV

Capacitance

25

pF

Detector

Breakdown Voltage

30

V

7V

Collector-Emitter

Dark Current

550

nA

Collector-Emitter

Capacitance

10

pF

Package

IL211AT

20

50

IL212AT

50

80

IL213AT

100 130

Collector-Emitter

0.4

Isolation Test

Voltage

2500

Capacitance,

Input to Output

0.5

pF

Resistance,

Input to Output

100

G

Ω

Switching Time

3.0

µsI

Specifications subject to change.

40

°

.240

(6.10)

.154

±.005

(3.91

±.13)

.050 (1.27)

typ.

.016 (.41)

.192

±.005

(4.88

±.13)

.004 (.10)

.008 (.20)

Lead

Coplanarity

±.0015 (.04)

max.

.015

±.002

(.38

±.05)

.008 (.20)

7

°

.058

±.005

(1.49

±.13)

.125

±.005

(3.18

±.13)

Pin One ID

.120

±.005

(3.05

±.13)

CL

.021 (.53)

5

° max.

R.010

(.25) max.

.020

±.004

(.15

±.10)

2 plcs.

1

2

3

4

Anode

Cathode

NC

NC

8

7

6

5

NC

Base

Collector

Emitter

10.95