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HYM64V8005GU-50 Datasheet(PDF) 9 Page - Siemens Semiconductor Group |
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HYM64V8005GU-50 Datasheet(HTML) 9 Page - Siemens Semiconductor Group |
9 / 17 page HYM 64(72)V8005/45GU-50/-60 8M x 64/72 DRAM Module Semiconductor Group 9 DC Characteristics for HYM64/72V8005 T A = 0 to 70 °C; VCC = 3.3 V ± 0.3 V Parameter Symbol x 64 x 72 Unit Note s min. max. min. max. Average V CC supply current: -50 version -60 version (RAS, CAS, address cycling, tRC = tRC min.) I CC1 – – 1120 960 – – 1260 1080 mA mA 2) 3) 4) Standby V CC supply current (RAS = CAS = V IH, one address change) I CC2 –8– 9 mA – Average V CC supply current during RAS only refresh cycles: -50 version -60 version (RAS cycling, CAS = V IH , t RC = tRC min.) I CC3 – – 1120 960 – – 1260 1080 mA mA 2) 4) Average V CC supply current during hyper page mode (EDO): -50 version -60 version (RAS = V IL, CAS, address cycling t PC = tPC min.) I CC4 – – 840 640 – – 945 720 mA mA 2) 3) 4) Standby V CC supply current (RAS = CAS = V CC – 0.2 V, one address change) I CC5 –4– 4,5 mA – Average V CC supply current during CAS-before-RAS refresh mode: -50 version -60 version (RAS, CAS cycling , t RC = tRC min.) I CC6 – – 1120 920 – – 1280 1035 mA mA 2) 4) |
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