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IL5 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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IL5 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
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2 / 5 page  5–2 IL1/2/5 Characteristics Symbol Min Typ Max Unit Condition Emitter Forward Voltage VF 1.25 1.65 V IF=60 mA Breakdown Voltage VBR 630 V IR=10 µA Reverse Current IR 0.01 10 µAV R=6 V Capacitance CO 40 pF VR=0 V, f=1 MHz Thermal Resistance Junction to Lead RTHJL 750 °C/W Detector Capacitance CCE CCB CEB 6.8 8.5 11 pF pF pF VCE=5 V, f=1 MHz VCB=5 V, f=1 MHz VEB=5 V, f=1 MHz Collector-Emitter Leakage Current ICEO 550 nA VCE=10 V Collector-Emitter Saturation Voltage VCESAT 0.25 ICE=1 mA, IB=20 µA Base-Emitter Voltage VBE 0.65 V VCE=10 V, IB=20 µA DC Forward Current Gain HFE 200 650 1800 VCE=10 V, IB=20 µA Saturated DC Forward Current Gain HFESAT 120 400 600 VCE=0.4 V, IB=20 µA Thermal Resistance Junction to Lead RTHJL 500 °C/W Package Transfer Characteristics IL1 Saturated Current Transfer Ratio (Collector-Emitter) CTRCESAT 75 % IF=10 mA, VCE=0.4 V Current Transfer Ratio (Collector-Emitter) CTRCE 20 80 300 % IF=10 mA, VCE=10 V Current Transfer Ratio (Collector-Base) CTRCB 0.25 % IF=10 mA, VCB=9.3 V IL2 Saturated Current Transfer Ratio (Collector-Emitter) CTRCESAT 170 % IF=10 mA, VCE=0.4 V Current Transfer Ratio (Collector-Emitter) CTRCE 100 200 500 % IF=10 mA, VCE=10 V Current Transfer Ratio CTRCB 0.25 % IF=10 mA, VCB=9.3 V IL5 Saturated Current Transfer Ratio (Collector-Emitter) CTRCESAT 100 % IF=10 mA, VCE=0.4 V Current Transfer Ratio (Collector-Emitter) CTRCE 50 130 400 % IF=10 mA, VCE=10 V Current Transfer Ratio CTRCB 0.25 % IF=10 mA, VCB=9.3 V Isolation and Insulation Common Mode Rejection Output High CMH 5000 V/ µsV CM=50 VP-P, RL=1 kΩ, IF=0 mA Common Mode Rejection Output Low CML 5000 V/ µsV CM=50 VP-P, RL=1 kΩ, IF=10 mA Common Mode Coupling Capacitance CCM 0.01 pF Package Capacitance CI-O 0.6 pF VI-O=0 V, f=1 MHz Insulation Resistance RS 10+14 Ω VI-O=500 V |
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