Semiconductor Group

5

HYB 514405BJ/BJL-50/-60/-70

1M x 4 EDO - DRAM

Absolute Maximum Ratings

Operating temperature range ............................................................................................0 to 70 ˚C

Storage temperature range......................................................................................– 55 to + 150 ˚C

Input/output voltage ........................................................................................................ – 1 to + 7 V

Power Supply voltage ..................................................................................................... – 1 to + 7 V

Data out current (short circuit) ................................................................................................ 50 mA

Note:

Stresses above those listed under "Absolute Maximum Ratings" may cause permanent

damage of the device. Exposure to absolute maximum rating conditions for extended periods

may affect device reliability.

DC Characteristics

T

Parameter

Symbol

Limit Values

Unit Test

Condition

min.

max.

Input high voltage

V

ih

2.4

V

V

1)

Input low voltage

V

il

– 1.0

0.8

V

1)

Output high voltage (

I

V

oh

2.4

–

V

1)

Output low voltage (

I

V

ol

–

0.4

V

1)

Input leakage current, any input

(0 V <

V

I

I(L)

– 10

10

µA

1)

Output leakage current

(DO is disabled, 0 <

V

I

o(L)

– 10

10

µA

1)

Average

V

-50 version

-60 version

-70 version

I

CC1

–

–

–

120

110

100

mA

2) 3)4)

Standby

V

(RAS = CAS = WE =

V

I

CC2

–2mA

–

Average

V

refresh cycles

-50 version

-60 version

-70 version

I

CC3

–

–

–

120

110

100

mA

2)4)

Average

V

mode(EDO) operation

-50 version

-60 version

-70 version

I

CC4

–

–

–

100

90

80

mA

2) 3)4)

Standby

V

(RAS = CAS = WE =

V

I

CC5

–1

200

mA

µA

1)

L-version