HYB514265BJ-50 datasheet(10/28 Pages) SIEMENS

Part #	HYB514265BJ-50

Description	256K x 16-Bit EDO-Dynamic RAM

Download	28 Pages

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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10 / 28 page

HYB 5(3)14265BJ(L)-400/-40/-45/-50

256K x 16 EDO-DRAM

Semiconductor Group

10

Hyper Page Mode (EDO) Read-Modify-Write Cycle

Hyper page mode read/write cycle time

t

PRWC

55

–

55

–

ns

CAS precharge to WE delay time

t

CPWD

35

–

35

–

ns

CAS before RAS Refresh Cycle

CAS setup time

t

CSR

5–5–ns

CAS hold time

t

CHR

5–5–ns

RAS to CAS precharge time

t

RPC

5–5–ns

Write to RAS precharge time

t

WRP

10

–

10

–

ns

Write to RAS hold time

t

WRH

10

–

10

–

ns

CAS-before-RAS Counter Test Cycle

CAS precharge time

t

CPT

25

–

25

–

ns

Parameter

Symbol

Limit Values

Unit Note

-400

-40

min.

max.

min.

max.

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HYB514265BJ-50 Datasheet(PDF) 10 Page - Siemens Semiconductor Group

HYB514265BJ-50 Datasheet(HTML) 10 Page - Siemens Semiconductor Group

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