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HYB514265BJ-50 Datasheet(PDF) 10 Page - Siemens Semiconductor Group |
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HYB514265BJ-50 Datasheet(HTML) 10 Page - Siemens Semiconductor Group |
10 / 28 page HYB 5(3)14265BJ(L)-400/-40/-45/-50 256K x 16 EDO-DRAM Semiconductor Group 10 Hyper Page Mode (EDO) Read-Modify-Write Cycle Hyper page mode read/write cycle time t PRWC 55 – 55 – ns CAS precharge to WE delay time t CPWD 35 – 35 – ns CAS before RAS Refresh Cycle CAS setup time t CSR 5–5–ns CAS hold time t CHR 5–5–ns RAS to CAS precharge time t RPC 5–5–ns Write to RAS precharge time t WRP 10 – 10 – ns Write to RAS hold time t WRH 10 – 10 – ns CAS-before-RAS Counter Test Cycle CAS precharge time t CPT 25 – 25 – ns Parameter Symbol Limit Values Unit Note -400 -40 min. max. min. max. |
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