HYB 514175BJ/BJL-50/-55/-60

256k

× 16 EDO-DRAM

Semiconductor Group

2

1998-10-01

The HYB 514175BJ is the new generation dynamic RAM organized as 262 144 words by 16-bit.

The HYB 514175BJ utilizes CMOS silicon gate process as well as advanced circuit techniques to

provide wide operation margins, both internally and for the system user. Multiplexed address inputs

permit the HYB 514175BJ to be packed in a standard plastic 400 mil wide P-SOJ-40-1 package.

This package size provides high system bit densities and is compatible with commonly used

automatic testing and insertion equipment. System oriented features include single + 5 V (

± 10 %)

power supply, direct interfacing with high performance logic device families such as Schottky TTL.

Ordering Information

Type

Ordering Code

Package

Description

HYB 514175BJ-50

Q67100-Q2072

P-SOJ-40-1 400 mil

50 ns 256k

× 16 EDO-DRAM

HYB 514175BJ-55

Q67100-Q2100

P-SOJ-40-1 400 mil

55 ns 256k

× 16 EDO-DRAM

HYB 514175BJ-60

Q67100-Q2073

P-SOJ-40-1 400 mil

60 ns 256k

× 16 EDO-DRAM

Truth Table

RAS

LCAS

UCAS

WE

OE

I/O1 - I/O8

I/O9 - I/O16

Operation

H

L

L

L

L

L

L

L

L

H

H

L

H

L

L

H

L

L

H

H

H

L

L

H

L

L

L

H

H

H

H

H

L

L

L

H

H

H

L

L

L

H

H

H

H

High-Z

High-Z

Dout

High-Z

Dout

Din

Don't care

Din

High-Z

High-Z

High-Z

High-Z

Dout

Dout

Don't care

Din

Din

High-Z

Standby

Refresh

Lower byte read

Upper byte read

Word read

Lower byte write

Upper byte write

Word write

−

Pin Names

A0 - A8

Address Inputs

RAS

Row Address Strobe

UCAS, LCAS

Column Address Strobe

WE

Read/Write Input

OE

Output Enable

I/O1 -I/O16

Data Input/Output

V

CC

Power Supply (+ 5 V)

V

SS

Ground (0 V)

N.C.

No Connection