HYB 514171BJ-50/-60

256k

× 16 DRAM

Semiconductor Group

5

1998-10-01

Absolute Maximum Ratings

Operating temperature range ....................................................................................... 0 to + 70

°C

Storage temperature range.................................................................................... – 55 to + 150

°C

Input/output voltage ......................................................................................................... – 1 to 6 V

Power supply voltage........................................................................................................ – 1 to 6 V

Data out current (short circuit) ............................................................................................... 50 mA

Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent

damage of the device. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability.

DC Characteristics

T

Parameter

Symbol

Limit Values

Unit Notes

min.

max.

Input high voltage

V

IH

2.4

V

V

1

Input low voltage

V

IL

– 1.0

0.8

V

1

TTL Output high voltage (

I

V

OH

2.4

–

V

1

TTL Output low voltage (

I

V

OL

–

0.4

V

1

Input leakage current, any input

(0 V <

V

I

I(L)

– 10

10

µA

1

Output leakage current

(DO is disabled, 0 V <

V

I

O(L)

– 10

10

µA

1

Average

V

-50 version

-60 version

I

CC1

–

190

170

mA

2, 3, 4

Standby

V

(RAS = LCAS = UCAS = WE =

V

I

CC2

–2mA

Average

V

RAS-only refresh cycles

-50 version

-60 version

I

CC3

–

190

170

mA

2, 4

Average

V

fast page mode operation

-50 version

-60 version

I

CC4

–

160

150

mA

2, 3, 4

Standby

V

(RAS = LCAS = UCAS = WE =

V

I

CC5

–1mA

1

Average

V

CAS-before-RAS refresh mode

-50 version

-60 version

I

CC6

–

190

170

mA

2, 4