Semiconductor Group

6

HYB5116(7)405BJ/BT-50/-60/-70

4M x 4-EDO DRAM

Absolute Maximum Ratings

Operating temperature range ............................................................................................0 to 70 °C

Storage temperature range.........................................................................................– 55 to 150 °C

Input/output voltage ................................................................................-0.5 to min (Vcc+0.5,7.0) V

Power supply voltage...................................................................................................-1.0V to 7.0 V

Power dissipation..................................................................................................................... 1.0 W

Data out current (short circuit) ................................................................................................ 50 mA

Note:

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of

the device. Exposure to absolute maximum rating conditions for extended periods may affect device

reliability.

DC Characteristics( note : values in brackets for HYB 5117405 BJ/BT)

T

Parameter

Symbol

Limit Values

Unit Test

Condition

min.

max.

Input high voltage

2.4

Vcc+0.5

V

1)

Input low voltage

V

IL

– 0.5

0.8

V

1)

Output high voltage (

2.4

–

V

1)

Output low voltage (

I

V

OL

–0.4

V

1)

Input leakage current

(0 V

IH

≤ Vcc + 0.3V, all other pins = 0 V)

– 10

10

µA

1)

Output leakage current

(DO is disabled, 0 V

OUT

≤ Vcc + 0.3V)

I

O(L)

– 10

10

µA

1)

Average

V

-50 ns version

-60 ns version

-70 ns version

I

CC1

–

–

–

100(120)

90 (110)

80 (100)

mA

mA

mA

2) 3) 4)

2) 3) 4)

2) 3) 4)

Standby

–2mA

–

Average

V

refresh cycles:

-50 ns version

-60 ns version

-70 ns version

(RAS cycling, CAS =

I

CC3

–

–

–

100(120)

90 (110)

80 (100)

mA

mA

mA

2) 4)

2) 4)

2) 4)