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HYB514100BJ-50- Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. HYB514100BJ-50-
Description  4M x 1-Bit Dynamic RAM
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB514100BJ-50- Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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HYB 514100BJ-50/-60
4M
× 1 DRAM
Semiconductor Group
2
1998-10-01
The HYB 514100BJ is the new generation dynamic RAM organized as 4 194 304 words by 1-bit.
The HYB 514100BJ utilizes CMOS silicon gate process as well as advances circuit techniques to
provide wide operation margins, both internally and for the system user. Multiplexed address inputs
permit the HYB 514100BJ to be packed in a standard plastic P-SOJ-26/20 package. This package
size provides high system bit densities and is compatible with commonly used automatic testing and
insertion equipment. System oriented features include single + 5 V (
± 10 %) power supply, direct
interfacing with high performance logic device families such as Schottky TTL.
Pin Configuration
Type
Ordering Code
Package
Descriptions
HYB 514100BJ-50
Q67100-Q971
P-SOJ-26/20-2 300 mil
DRAM (access time 50 ns)
HYB 514100BJ-60
Q67100-Q759
P-SOJ-26/20-2 300 mil
DRAM (access time 60 ns)
Pin Names
A0 – A10
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Read/Write Input
DI
Data In
DO
Data Out
V
CC
Power Supply (+ 5 V)
V
SS
Ground (0 V)
N.C.
No Connection
P-SOJ-26/20-2
1
2
3
4
5
9
10
11
12
13
14
15
16
17
18
22
23
A8
A0
RAS
N.C.
A10
SPP02808
A1
A7
DO
CAS
SS
V
DI
WE
A3
A2
A5
26
25
24
A6
CC
V
N.C.
A9
A4


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