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HYB514100BJ-50- Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. HYB514100BJ-50-
Description  4M x 1-Bit Dynamic RAM
Download  21 Pages
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB514100BJ-50- Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
1998-10-01
4M
× 1-Bit Dynamic RAM
Advanced Information
• 4 194 304 words by 1-bit organization
• 0 to 70
°C operating temperature
• Fast Page Mode Operation
• Performance:
• Single + 5 V (
± 10 %) supply with a built-in V
BB generator
• Low power dissipation
max. 660 mW active (-50 version)
max. 605 mW active (-60 version)
• Standby power dissipation:
11 mW max. standby (TTL)
5.5 mW max. standby (CMOS)
• Output unlatched at cycle end allows two-dimensional chip selection
• Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh,
hidden refresh and test mode capability
• All inputs and outputs TTL-compatible
• 1024 refresh cycles/16 ms
• Plastic Packages: P-SOJ-26/20-2 with 300 mil width
-50
-60
t
RAC
RAS access time
50
60
ns
t
CAC
CAS access time
13
15
ns
t
AA
Access time from address
25
30
ns
t
RC
Read/Write cycle time
95
110
ns
t
PC
Fast page mode cycle time
35
40
ns
HYB 514100BJ-50/-60


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