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HYB514100BJ-50- Datasheet(PDF) 6 Page - Siemens Semiconductor Group

Part No. HYB514100BJ-50-
Description  4M x 1-Bit Dynamic RAM
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB514100BJ-50- Datasheet(HTML) 6 Page - Siemens Semiconductor Group

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HYB 514100BJ-50/-60
4M
× 1 DRAM
Semiconductor Group
6
1998-10-01
CAS to RAS precharge time
t
CRP
5–
5
ns
Transition time (rise and fall)
t
T
3
50
3
50
ns
7
Refresh period
t
REF
16
16
ms
Read Cycle
Access time from RAS
t
RAC
50
60
ns
8, 9
Access time from CAS
t
CAC
13
15
ns
8, 9
Access time from column address
t
AA
25
30
ns
8, 10
Column addr. to RAS lead time
t
RAL
25
30
ns
Read command setup time
t
RCS
0–
0
ns
Read command hold time
t
RCH
0–
0
ns
11
Read command hold time referenced to RAS
t
RRH
0–
0
ns
11
CAS to output in low–Z
t
CLZ
0–
0
ns
8
Output buffer turn-off delay
t
OFF
0
13
0
15
ns
12
Write Cycle
Write command hold time
t
WCH
8
10
ns
Write command pulse width
t
WP
8
10
ns
Write command setup time
t
WCS
0–
0
ns
13
Write command to RAS lead time
t
RWL
13
15
ns
Write command to CAS lead time
t
CWL
13
15
ns
Data setup time
t
DS
0–
0
ns
14
Data hold time
t
DH
10
10
ns
14
Read-Modify-Write Cycle
Read-write cycle time
t
RWC
115
130
ns
RAS to WE delay time
t
RWD
50
60
ns
13
CAS to WE delay time
t
CWD
13
15
ns
13
Column address to WE delay time
t
AWD
25
30
ns
13
AC Characteristics (cont’d)
5, 6
T
A = 0 to 70 °C, VCC =5V ±10%, tT =5ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max.
min. max.


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