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HYB514100BJ-50- Datasheet(PDF) 5 Page - Siemens Semiconductor Group

Part No. HYB514100BJ-50-
Description  4M x 1-Bit Dynamic RAM
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB514100BJ-50- Datasheet(HTML) 5 Page - Siemens Semiconductor Group

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HYB 514100BJ-50/-60
4M
× 1 DRAM
Semiconductor Group
5
1998-10-01
Standby
V
CC supply current
I
CC5
–1mA
1
Average
V
CC supply current during
CAS-before-RAS refresh mode
-50 version
-60 version
I
CC6
120
110
mA
mA
2
Capacitance
T
A = 0 to 70 °C, VCC = 5.0 V ±10%, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A10, DI)
C
I1
–5pF
Input capacitance (RAS, CAS, WE)
C
I2
–7pF
Output capacitance (DO)
C
IO
–7pF
AC Characteristics
5, 6
T
A = 0 to 70 °C, VCC =5V ±10%, tT =5ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max.
min. max.
Common Parameters
Random read or write cycle time
t
RC
95
110
ns
RAS precharge time
t
RP
35
40
ns
RAS pulse width
t
RAS
50
10k
60
10k
ns
CAS pulse width
t
CAS
13
10k
15
10k
ns
Row address setup time
t
ASR
0–
0
ns
Row address hold time
t
RAH
8
10
ns
Column address setup time
t
ASC
0–
0
ns
Column address hold time
t
CAH
10
15
ns
RAS to CAS delay time
t
RCD
18
37
20
45
ns
RAS to column address delay time
t
RAD
13
25
15
30
ns
RAS hold time
t
RSH
13
15
ns
CAS hold time
t
CSH
50
60
ns
DC Characteristics (cont’d)
T
A = 0 to 70 °C, VSS = 0 V, VCC = 5 10 %, tT = 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.


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