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HYB514100BJ-50- Datasheet(PDF) 5 Page - Siemens Semiconductor Group |
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HYB514100BJ-50- Datasheet(HTML) 5 Page - Siemens Semiconductor Group |
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HYB 514100BJ-50/-60 4M × 1 DRAM Semiconductor Group 5 1998-10-01 Standby V CC supply current I CC5 –1mA 1 Average V CC supply current during CAS-before-RAS refresh mode -50 version -60 version I CC6 – – 120 110 mA mA 2 Capacitance T A = 0 to 70 °C, VCC = 5.0 V ±10%, f = 1 MHz Parameter Symbol Limit Values Unit min. max. Input capacitance (A0 to A10, DI) C I1 –5pF Input capacitance (RAS, CAS, WE) C I2 –7pF Output capacitance (DO) C IO –7pF AC Characteristics 5, 6 T A = 0 to 70 °C, VCC =5V ±10%, tT =5ns Parameter Symbol Limit Values Unit Note -50 -60 min. max. min. max. Common Parameters Random read or write cycle time t RC 95 – 110 – ns RAS precharge time t RP 35 – 40 – ns RAS pulse width t RAS 50 10k 60 10k ns CAS pulse width t CAS 13 10k 15 10k ns Row address setup time t ASR 0– 0 – ns Row address hold time t RAH 8 – 10 – ns Column address setup time t ASC 0– 0 – ns Column address hold time t CAH 10 – 15 – ns RAS to CAS delay time t RCD 18 37 20 45 ns RAS to column address delay time t RAD 13 25 15 30 ns RAS hold time t RSH 13 15 – ns CAS hold time t CSH 50 60 – ns DC Characteristics (cont’d) T A = 0 to 70 °C, VSS = 0 V, VCC = 5 10 %, tT = 5 ns Parameter Symbol Limit Values Unit Test Condition min. max. |
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