HYB 5118165BSJ/BST-50/-60

HYB 3118165BSJ/BST-50/-60

1M

× 16 EDO-DRAM

Semiconductor Group

2

1998-10-01

The HYB 5(3)118165 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized

as 1 048 576 words by 16-bits. The HYB 5(3)118165 utilizes a submicron CMOS silicon gate

process technology, as well as advanced circuit techniques to provide wide operating margins, both

internally and for the system user. Multiplexed address inputs permit the HYB 5(3)18165 to be

packaged in a standard SOJ-42 and TSOPII-50/44 plastic package with 400 mil width. These

packages provide high system bit densities and are compatible with commonly used automatic

testing and insertion equipment.

Ordering Information

Type

Ordering Code

Package

Descriptions

HYB 5118165BSJ-50

Q67100-Q1107

P-SOJ-42-1 400 mil

5 V

50 ns EDO-DRAM

HYB 5118165BSJ-60

Q67100-Q1108

P-SOJ-42-1 400 mil

5 V

60 ns EDO-DRAM

HYB 3118165BSJ-50

on request

P-SOJ-42-1 400 mil

3.3 V 50 ns EDO-DRAM

HYB 3118165BSJ-60

on request

P-SOJ-42-1 400 mil

3.3 V 60 ns EDO-DRAM

HYB 5118165BST-50 on request

P-TSOPII-50/44-1 400 mil

5 V

50 ns EDO-DRAM

HYB 5118165BST-60 on request

P-TSOPII-50/44-1 400 mil

5 V

60 ns EDO-DRAM

HYB 3118165BST-50 on request

P-TSOPII-50/44-1 400 mil

3.3 V 50 ns EDO-DRAM

HYB 3118165BST-60 on request

P-TSOPII-50/44-1 400 mil

3.3 V 60 ns EDO-DRAM