Semiconductor Group

2

HYB 5118160BSJ-50/-60/-70

1M x 16-DRAM

The HYB 5118160BSJ is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The

HYB 5118160BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced

circuit techniques to provide wide operating margins, both internally and for the system user.

Multiplexed address inputs permit the HYB 5118160BSJ to be packaged in a standard SOJ 42

400 mil plastic package. These packages provide high system bit densities and are compatible with

commonly used automatic testing and insertion equipment. System-oriented features include single

+ 5 V (

± 10 %) power supply, direct interfacing with high-performance logic device families such as

Schottky TTL.

Ordering Information

Pin Names

Type

Ordering Code

Package

Descriptions

HYB 5118160BSJ-50

Q67100-Q1072

P-SOJ-42-1 400 mil DRAM (access time 50 ns)

HYB 5118160BSJ-60

Q67100-Q1073

P-SOJ-42-1 400 mil DRAM (access time 60 ns)

HYB 5118160BSJ-70

Q67100-Q1074

P-SOJ-42-1 400 mil DRAM (access time 70 ns)

A0 to A9

Row Address Inputs

A0 to A9

Column Addess Inputs

RAS

Row Address Strobe

OE

Output Enable

I/O1-I/O16

Data Input/Output

UCAS

Upper Column Address Strobe

LCAS

Lower Column Address Strobe

WE

Read/Write Input

V

CC

Power Supply (+ 5 V)

Ground (0 V)

N.C.

not connected