HYB5116405BJ-60 datasheet(7/28 Pages) SIEMENS

Part #	HYB5116405BJ-60

Description	4M x 4-Bit Dynamic RAM 2k & 4k Refresh

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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HYB 5116(7)405BJ-50/-60

HYB 3116(7)405BJ/BT(L)-50/-60

4M

× 4 EDO-DRAM

Semiconductor Group

7

1998-10-01

DC Characteristics (cont’d)

T

A = 0 to 70 °C, VSS = 0 V, tT = 2 ns

Parameter

Symbol

Limit Values

Unit

Notes

min.

max.

2k

4k

Common Parameters

Input leakage current

(0 V

≤ V

IH ≤ VCC + 0.3 V, all other pins = 0 V)

I

I(L)

– 10

10

µA

1

Output leakage current

(DO is disabled, 0 V

≤ V

OUT ≤ VCC + 0.3 V)

I

O(L)

– 10

10

µA

1

Average

V

CC supply current

-50 version

-60 version

(RAS, CAS, address cycling:

t

RC = tRC MIN.)

I

CC1

–

80

70

50

40

mA

2, 3, 4

Standby

V

CC supply current

(RAS = CAS =

V

IH)

I

CC2

–

2

mA

–

Average

V

CC supply current, during RAS-only

refresh cycles

-50 version

-60 version

(RAS cycling, CAS =

V

IH, tRC = tRC MIN.)

I

CC3

–

80

70

50

40

mA

2, 4

Average

V

CC supply current,during hyper page

mode (EDO)

-50 version

-60 version

(RAS =

V

IL, CAS, address cycling:

t

PC = tPC MIN.)

I

CC4

–

35

30

mA

2, 3, 4

Standby

V

CC supply current

(RAS = CAS =

V

CC – 0.2 V)

I

CC5

–1

200

mA

µA

1

L-version

Average

V

CC supply current, during CAS-

before-RAS refresh mode

-50 version

-60 version

(RAS, CAS cycling:

t

RC = tRC MIN.)

I

CC6

–

80

70

50

40

mA

2, 4

Average Self Refresh current

(CBR cycle with

t

RAS > tRASS MIN., CAS held

low, WE =

V

CC – 0.2 V, Address and

Din =

V

CC – 0.2 V or 0.2 V)

I

CC7

–

250

µAL-

version

only

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