Semiconductor Group

2

HYB5117805BSJ-50/-60/-70

2M x 8-EDO DRAM

The HYB 5117805BSJ is a 16 MBit dynamic RAM organized as 2 097 152 words by 8-bits. The HYB

5117805BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced

circuit techniques to provide wide operating margins, both internally and for the system user.

Multiplexed address inputs permit the HYB 5117805BSJ to be packaged in a standard

SOJ 28

plastic package with 400 mil width. These packages provide high system bit densities and are

compatible with commonly used automatic testing and insertion equipment. System-oriented

features include single + 5 V (

± 10 %) power supply, direct interfacing with high-performance logic

device families such as Schottky TTL.

Ordering Information

Pin Names

Type

Ordering Code

Package

Descriptions

HYB 5117805BJ-50

Q67100-Q1104

P-SOJ-28-3 400 mil

DRAM (access time 50 ns)

HYB 5117805BJ-60

Q67100-Q1105

P-SOJ-28-3 400 mil

DRAM (access time 60 ns)

HYB 5117805BJ-70

Q67100-Q1106

P-SOJ-28-3 400 mil

DRAM (access time 70 ns)

A0-A10

Row Address Inputs

A0-A9

Column Address Inputs

RAS

Row Address Strobe

OE

Output Enable

I/O1-I/O8

Data Input/Output

CAS

Column Address Strobe

WE

Read/Write Input

Power Supply (+ 5 V)

V

SS

Ground (0 V)

N.C.

not connected