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AM2371P Datasheet(PDF) 1 Page - Analog Power |
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AM2371P Datasheet(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM2371P P-Channel 100-V (D-S) MOSFET VDS (V) ID(A) -1 -0.9 Symbol Limit Units VDS -100 VGS ±20 TA=25°C -1 TA=70°C -0.8 IDM -10 IS -1.6 A TA=25°C 1.3 TA=70°C 0.8 TJ, Tstg -55 to 150 °C Symbol Maximum Units 100 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage V Gate-Source Voltage PRODUCT SUMMARY rDS(on) (Ω) -100 1.2 @ VGS = -10V 1.3 @ VGS = -4.5V Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a t <= 10 sec RθJA °C/W Steady State ID A Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a PD W Continuous Drain Current a Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • PoE Power Sourcing Equipment • PoE Powered Devices • Telecom DC/DC converters • White LED boost converters © Preliminary 1 Publication Order Number: DS-AM2371P_2010 |
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