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HYB5117405BJ-60 Datasheet(PDF) 9 Page - Siemens Semiconductor Group

Part # HYB5117405BJ-60
Description  4M x 4-Bit Dynamic RAM 2k & 4k Refresh
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB5117405BJ-60 Datasheet(HTML) 9 Page - Siemens Semiconductor Group

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HYB 5116(7)405BJ-50/-60
HYB 3116(7)405BJ/BT(L)-50/-60
4M
× 4 EDO-DRAM
Semiconductor Group
9
1998-10-01
Access time from column address
t
AA
25
30
ns
8, 10
OE access time
t
OEA
13
15
ns
Column address to RAS lead time
t
RAL
25
30
ns
Read command setup time
t
RCS
0–0–ns
Read command hold time
t
RCH
0–0–ns
11
Read command hold time referenced to RAS
t
RRH
0–0–ns
11
CAS to output in low-Z
t
CLZ
0–0–ns
8
Output buffer turn-off delay
t
OFF
0
13
0
15
ns
12
Output turn-off delay from OE
t
OEZ
0
13
0
15
ns
12
Data to CAS low delay
t
DZC
0–0–ns
13
Data to OE low delay
t
DZO
0–0–ns
13
CAS high to data delay
t
CDD
10
13
ns
14
OE high to data delay
t
ODD
10
13
ns
14
Write Cycle
Write command hold time
t
WCH
8–10
–ns
Write command pulse width
t
WP
8–10
–ns
Write command setup time
t
WCS
0–0–ns
15
Write command to RAS lead time
t
RWL
8–10
–ns
Write command to CAS lead time
t
CWL
8–10
–ns
Data setup time
t
DS
0–0–ns
16
Data hold time
t
DH
8–10
–ns
16
Read-Modify-Write Cycle
Read-write cycle time
t
RWC
113
138
ns
RAS to WE delay time
t
RWD
64
77
ns
15
CAS to WE delay time
t
CWD
27
32
ns
15
Column address to WE delay time
t
AWD
39
47
ns
15
OE command hold time
t
OEH
10
13
ns
AC Characteristics (cont’d)
5, 6
T
A = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
min.
max.
min.
max.


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