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HYB5116400BJ-50 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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HYB5116400BJ-50 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 26 page Semiconductor Group 2 HYB 5116400BJ/BT-50/-60/-70 4M x 4-DRAM The HYB 5116400BJ/BT is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 5116400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5116400BJ/BT to be packaged in a standard SOJ 26/24 or TSOPII-26/24 plastic package, both with 300 mil width. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. System-oriented features include single + 5 V ( ± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Pin Names Type Ordering Code Package Descriptions HYB 5116400BJ-50 Q67100-Q1049 P-SOJ-26/24 300 mil DRAM (access time 50 ns) HYB 5116400BJ-60 Q67100-Q1050 P-SOJ-26/24 300 mil DRAM (access time 60 ns) HYB 5116400BJ-70 Q67100-Q1051 P-SOJ-26/24 300 mil DRAM (access time 70 ns) HYB 5116400BT-50 on request P-TSOPII-26/24 300mil DRAM (access time 50 ns) HYB 5116400BT-60 on request P-TSOPII-26/24 300mil DRAM (access time 60 ns) HYB 5116400BT-70 on request P-TSOPII-26/24 300mil DRAM (access time 70 ns) A0-A11 Row Address Inputs A0-A9 Column Address Inputs RAS Row Address Strobe OE Output Enable I/O1-I/O4 Data Input/Output CAS Column Address Strobe WE Read/Write Input V CC Power Supply (+ 5 V) VSS Ground (0 V) N.C. not connected |
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