HYB511000BJ- datasheet(2/22 Pages) SIEMENS | 1 M x 1-Bit Dynamic RAM Low Power 1 M ´ 1-Bit Dynamic RAM

Part No.	HYB511000BJ-

Description	1 M x 1-Bit Dynamic RAM Low Power 1 M ´ 1-Bit Dynamic RAM

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Maker	SIEMENS [Siemens Semiconductor Group]

Homepage	http://www.siemens.com/

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Semiconductor Group

HYB 511000BJ/BJL-50/-60/-70

1 M

× 1-DRAM

The HYB 511000BJ/BJL is the new generation dynamic RAM organized as 1 048 576 words by

1-bit. The HYB 511000BJ/BJL utilizes CMOS silicon gate process technology as well as advanced

circuit techniques to provide wide operating margins, both internally and for the system user.

Multiplexed address inputs permit the HYB 511000BJ/BJL to be packaged in a standard plastic

P-SOJ-26/20. This package size provides high system bit densities and is compatible with

commonly used automatic testing and insertion equipment. System oriented features include single

+ 5 V (

± 10 %) power supply, direct interfacing with high-performance logic device families such as

Schottky TTL. “Test Mode” function is implemented. The HYB 511000BJL are specially selected for

low power battery backup applications.

Pin Definitions and Functions

Pin No.

Function

A0-A9

Address Inputs

RAS

Row Address Strobe

Data In

Data Out

CAS

Column Address Strobe

Read/Write Input

Power Supply (+ 5 V)

Ground (0 V)

Test Function

N.C.

No Connection

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