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HYB511000BJ- Datasheet(PDF) 2 Page - Siemens Semiconductor Group

Part No. HYB511000BJ-
Description  1 M x 1-Bit Dynamic RAM Low Power 1 M ´ 1-Bit Dynamic RAM
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB511000BJ- Datasheet(HTML) 2 Page - Siemens Semiconductor Group

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Semiconductor Group
34
HYB 511000BJ/BJL-50/-60/-70
1 M
× 1-DRAM
The HYB 511000BJ/BJL is the new generation dynamic RAM organized as 1 048 576 words by
1-bit. The HYB 511000BJ/BJL utilizes CMOS silicon gate process technology as well as advanced
circuit techniques to provide wide operating margins, both internally and for the system user.
Multiplexed address inputs permit the HYB 511000BJ/BJL to be packaged in a standard plastic
P-SOJ-26/20. This package size provides high system bit densities and is compatible with
commonly used automatic testing and insertion equipment. System oriented features include single
+ 5 V (
± 10 %) power supply, direct interfacing with high-performance logic device families such as
Schottky TTL. “Test Mode” function is implemented. The HYB 511000BJL are specially selected for
low power battery backup applications.
Pin Definitions and Functions
Pin No.
Function
A0-A9
Address Inputs
RAS
Row Address Strobe
DI
Data In
DO
Data Out
CAS
Column Address Strobe
WE
Read/Write Input
V
CC
Power Supply (+ 5 V)
V
SS
Ground (0 V)
TF
Test Function
N.C.
No Connection


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