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HYB511000BJ- Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part No. HYB511000BJ-
Description  1 M x 1-Bit Dynamic RAM Low Power 1 M ´ 1-Bit Dynamic RAM
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB511000BJ- Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
33
01.95
1 048 576 words by 1-bit organization
Fast access and cycle time
50 ns access time
95 ns cycle time (-50 version)
60 ns access time
130 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
45 ns (-70 version)
Low power dissipation
max. 495 mW active (-50 version)
max. 440 mW active (-60 version)
max. 385 mW active (-70 version)
max. 5.5 mW standby
max. 1.1 mW standby for L-version
Ordering Information
Type
Ordering Code
Package
Description
HYB 511000BJ-50
Q67100-Q1056
P-SOJ-26/20-1
DRAM (access time 50 ns)
HYB 511000BJ-60
Q67100-Q518
P-SOJ-26/20-1
DRAM (access time 60 ns)
HYB 511000BJ-70
Q67100-Q519
P-SOJ-26/20-1
DRAM (access time 70 ns)
HYB 511000BJL-50
on request
P-SOJ-26/20-1
DRAM (access time 50 ns)
HYB 511000BJL-60
Q67100-Q526
P-SOJ-26/20-1
DRAM (access time 60 ns)
HYB 511000BJL-70
Q67100-Q527
P-SOJ-26/20-1
DRAM (access time 70 ns)
1 M
× 1-Bit Dynamic RAM
Low Power 1 M
× 1-Bit Dynamic RAM
Advanced Information
HYB 511000BJ-50/-60/-70
HYB 511000BJL-50/-60/-70
Single + 5 V (
± 10 %) supply with a built-in
V
BB generator
Output unlatched at cycle end allows two-
dimensional chip selection
Common I/O capability using “early write”
operation
Read-modify-write, CAS-before-RAS
refresh, RAS-only refresh, hidden-refresh,
fast page mode capability and test mode
capability
All inputs, outputs and clocks
TTL-compatible
512 refresh cycles/8 ms
512 refresh cycles/64 ms
for L-version only
Plastic Packages:
P-SOJ-26/20-1


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