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HYB511000BJ- Datasheet(PDF) 6 Page - Siemens Semiconductor Group

Part No. HYB511000BJ-
Description  1 M x 1-Bit Dynamic RAM Low Power 1 M ´ 1-Bit Dynamic RAM
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB511000BJ- Datasheet(HTML) 6 Page - Siemens Semiconductor Group

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Semiconductor Group
38
HYB 511000BJ/BJL-50/-60/-70
1 M
× 1-DRAM
Average
V
CC supply current during RAS only
refresh cycles:
-50 version
-60 version
-70 version
(RAS cycling: CAS =
V
IH : tRC = tRC min.)
I
CC3
90
80
70
mA
mA
mA
2)
2)
2)
Average
V
CC supply current during fast page
modes:
-50 version
-60 version
-70 version
(RAS =
V
IL , CAS, address cycling:
t
PC = tPC min.)
I
CC4
70
60
50
mA
mA
mA
2) 3)
2) 3)
2) 3)
Standby
V
CC supply current
L-Version
(RAS = CAS =
V
CC – 0.2 V)
I
CC5
1
200
mA
µA
1)
1)
Average
V
CC supply current during
CAS-before-RAS refresh mode:
-50 version
-60 version
-70 version
(RAS, CAS, address cycling:
t
RC = tRC min.)
I
CC6
90
80
70
mA
mA
mA
2)
2)
2)
For L-version only:
Battery backup current:
average power supply current, battery backup
mode:
(CAS = CAS before RAS cycling or 0.2 V,
WE =
V
CC – 0.2 V or 0.2 V,
A0 to A9 =
V
CC – 0.2 V or 0.2 V,
DI =
V
CC – 0.2 V or 0.2 V open,
t
RC = 125 µs, tRAS = tRAS min. ~ 1 µs)
I
CC7
300
µA
2)
Input leakage current (only TF)
(0 V
V
IN (TF) ≤ VCC + 0.5 V)
All other pins not under test = 0 V
I
ITF(L)
– 10
+ 10
µA
1)
Test function input current
(
V
CC + 4.5 ≤ VIN (TF) ≤ 10.5 V)
I
TF
–1mA
1)
DC Characteristics (cont’d)
T
A = 0 to 70 ˚C; VSS = 0 V; VCC = 5 V ± 10 %
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.


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