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HYB511000BJ- Datasheet(PDF) 5 Page - Siemens Semiconductor Group

Part No. HYB511000BJ-
Description  1 M x 1-Bit Dynamic RAM Low Power 1 M ´ 1-Bit Dynamic RAM
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB511000BJ- Datasheet(HTML) 5 Page - Siemens Semiconductor Group

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Semiconductor Group
37
HYB 511000BJ/BJL-50/-60/-70
1 M
× 1-DRAM
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70 ˚C
Storage temperature range......................................................................................– 55 to + 150 ˚C
Soldering temperature ............................................................................................................260 ˚C
Soldering time .............................................................................................................................10 s
Input/output voltage ........................................................................................................ – 1 to + 7 V
Test Function Input voltage ....................................................................................... – 1 to + 10.5 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation..................................................................................................................... 0.6 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T
A = 0 to 70 ˚C; VSS = 0 V; VCC = 5 V ± 10 %
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
Input high voltage
V
IH
2.4
6.5
V
1)
Input low voltage
V
IL
– 1.0
0.8
V
1)
Test enable input high voltage
V
IH(TF)
V
CC + 4.5
10.5
V
1)
Test disable input low voltage
V
IL(TF)
– 1.0
V
CC + 1.0
V
1)
Output high voltage (
I
OUT = – 5 mA)
V
OH
2.4
V
1)
Output low voltage (
I
OUT = 4.2 mA)
V
OL
0.4
V
1)
Input leakage current, any input except TF
(0 V
V
IN ≤ 6.5 V, all other pins = 0 V)
I
I(L)
– 10
10
µA
1)
Output leakage current
(DO is disabled, 0 V
V
OUT ≤ 5.5 V)
I
O(L)
– 10
10
µA
1)
Average
V
CC supply current:
-50 version
-60 version
-70 version
(RAS, CAS, address cycling:
t
RC = tRC min.)
I
CC1
90
80
70
mA
mA
mA
2) 3)
2) 3)
2) 3)
Standby
V
CC supply current (RAS = CAS = VIH)
I
CC2
–2mA


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