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HYB3165800J-60 Datasheet(PDF) 8 Page - Siemens Semiconductor Group

Part # HYB3165800J-60
Description  8M x 8-Bit Dynamic RAM
Download  28 Pages
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB3165800J-60 Datasheet(HTML) 8 Page - Siemens Semiconductor Group

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Semiconductor Group
128
HYB 3164(5)800J/T-50/-60
8M x 8-DRAM
Average Vcc supply current, during RAS-only
refresh cycles:
-50 ns version
-60 ns version
(RAS cycling: CAS = VIH: tRC = tRC min.)
I
CC3
–
–
110 (140)
100 (120)
mA
mA
2) 4)
Average Vcc supply current,
during fast page mode:
-50 ns version
-60 ns version
(RAS = VIL, CAS, address cycling: tPC=tPC min.)
I
CC4
–
–
85 (85)
75 (75)
mA
mA
2) 3) 4)
Standby Vcc supply current
(RAS=CAS= Vcc-0.2V)
I
CC5
–
200
A
–
Average Vcc supply current, during CAS-before-
RAS refresh mode:
-50 ns version
-60 ns version
(RAS, CAS cycling: tRC = tRC min.)
I
CC6
–
–
110 (140)
100 (120)
mA
mA
2) 4)
Self Refresh Current
Average Power Supply Current during Self Refresh.
(CBR cycle with tRAS>TRASSmin, CAS held low,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
I
CC7
–
400
A
Capacitance
T
A = 0 to 70 ˚C,VCC = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A11,A12)
C
I1
–5pF
Input capacitance (RAS, CAS, WRITE, OE)
C
I2
–7pF
I/O capacitance (I/O1-I/O8)
C
IO
–7pF
DC Characteristics (cont’d)
T
A = 0 to 70 ˚C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, (values in brackets for HYB 3165800J/T)
Parameter
Symbol
Limit Values
Unit Note
min.
max.


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