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HYB3166165BT-40 Datasheet(PDF) 9 Page - Siemens Semiconductor Group

Part # HYB3166165BT-40
Description  4M x 16-Bit Dynamic RAM
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB3166165BT-40 Datasheet(HTML) 9 Page - Siemens Semiconductor Group

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Semiconductor Group
9
HYB3164(5/6)165BT(L)-40/-50/-60
4M x 16 EDO-DRAM
DC-Characteristics (cont’d)
T
A = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V
Parameter
Symbol
refresh version
Unit Note
2k
4k
8k
Operating Current
-40 ns version
-50 ns version
-
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
I
CC1
240
195
155
135
110
90
85
70
60
mA
mA
mA
2) 3)
4)
Standby Current (RAS=CAS= Vih)
I
CC2
222
mA
–
RASOnlyRefresh Current:
-
-40 ns version
-50 ns version
-60 ns version
(RAS cycling: CAS = VIH: tRC = tRC min.)
I
CC3
240
195
155
135
110
90
85
70
60
mA
mA
mA
2) 4)
Hyper Page Mode (EDO) Current:
-40 ns version
-50 ns version
-60 ns version
(RAS = VIL, CAS, address cycling: tHPC=tHPC min.)
I
CC4
100
65
45
100
65
45
100
65
45
mA
mA
mA
2) 3)
4)
Standby Current
(RAS=CAS= Vcc-0.2V)
I
CC5
111
mA
–
Standby Current (L-Version)
(RAS=CAS= Vcc-0.2V)
I
CC5
200
200
200
µA–
CAS Before RAS Refresh Current
-40 ns version
-50 ns version
-60 ns version
(RAS, CAS cycling: tRC = tRC min.)
I
CC6
240
195
155
135
110
90
85
70
60
mA
mA
mA
2) 4)
Self Refresh Current (L-version only)
(CBR cycle with tRAS>TRASSmin, CAS held low,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
I
CC7
400
400
400
µA
Capacitance
T
A = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A11,A12)
C
I1
–5
pF
Input capacitance (RAS, CAS, WE, OE)
C
I2
–7
pF
I/O capacitance (I/O1-I/O16)
C
IO
–7
pF


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