Semiconductor Group

2

HYB3164(5/6)160AT(L)-40/-50/-60

4M x 16-DRAM

This device is a 64 MBit dynamic RAM organized 4 194 304 by 16 bits. The device is fabricated on

an advanced second generation 64Mbit 0,35

µm-CMOS silicon gate process technology. The circuit

and process design allow this device to achieve high performance and low power dissipation. This

DRAM operates with a single 3.3 +/-0.3V power supply

and interfaces with either LVTTL or

LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)160AT to be packaged in a 400

mil wide TSOP-50 package. These packages provide high system bit densities and are compatible

with commonly used automatic testing and insertion equipment. The HYB3164(5/6)160ATL parts

(L-version) have a very low power „sleep mode“ supported by Self Refresh.

Ordering Information

Type

Ordering

Code

Package

Descriptions

8k-refresh versions:

HYB 3164160AT-40

P-TSOPII-50

400 mil

DRAM (access time 40 ns)

HYB 3164160AT-50

P-TSOPII-50

400 mil

DRAM (access time 50 ns)

HYB 3164160AT-60

P-TSOPII-50

400 mil

DRAM (access time 60 ns)

HYB 3164160ATL-50

P-TSOPII-50

400 mil

DRAM (access time 50 ns)

HYB 3164160ATL-60

P-TSOPII-50

400 mil

DRAM (access time 60 ns)

4k-refresh versions:

HYB 3165160AT-40

P-TSOPII-50

400 mil

DRAM (access time 40 ns)

HYB 3165160AT-50

P-TSOPII-50

400 mil

DRAM (access time 50 ns)

HYB 3165160AT-60

P-TSOPII-50

400 mil

DRAM (access time 60 ns)

HYB 3165160ATL-50

P-TSOPII-50

400 mil

DRAM (access time 50 ns)

HYB 3165160ATL-60

P-TSOPII-50

400 mil

DRAM (access time 60 ns)

2k-refresh versions:

HYB 3166160AT-40

P-TSOPII-50

400 mil

DRAM (access time 40 ns)

HYB 3166160AT-50

P-TSOPII-50

400 mil

DRAM (access time 50 ns)

HYB 3166160AT-60

P-TSOPII-50

400 mil

DRAM (access time 60 ns)

HYB 3166160ATL-50

P-TSOPII-50

400 mil

DRAM (access time 50 ns)

HYB 3166160ATL-60

P-TSOPII-50

400 mil

DRAM (access time 60 ns)