HYB3164405BJ-60 datasheet(8/29 Pages) SIEMENS

Part #	HYB3164405BJ-60

Description	16M x 4-Bit Dynamic RAM

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

8

HYB3164(5)405BJ/BT(L)-40/-50/-60

16M x 4-DRAM

DC-Characteristics (cont’d)

T

A = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V

Parameter

Symbol refresh

version Unit Note

4k row

8k row

Operating Current

-40 ns version

-50 ns version

-

-60 ns version

(RAS, CAS, address cycling: tRC = tRC min.)

I

CC1

135

110

90

85

70

60

mA

2) 3) 4)

Standby Current (RAS=CAS= Vih)

I

CC2

22

mA

–

RASOnlyRefresh Current:

-

- 40 ns version

-50 ns version

-60 ns version

(RAS cycling: CAS = VIH: tRC = tRC min.)

I

CC3

135

110

90

85

70

60

mA

2) 4)

Hyper Page Mode (EDO) Current:

-40 ns version

-50 ns version

-60 ns version

(RAS = VIL, CAS, address cycling: tHPC=tHPC min.)

I

CC4

100

65

45

100

65

45

mA

2) 3) 4)

Standby Current

(RAS=CAS= Vcc-0.2V)

I

CC5

11

mA

–

Standby Current (L-Version)

(RAS=CAS= Vcc-0.2V)

I

CC5

200

µA–

CAS Before RAS Refresh Current

- 40 ns version

-50 ns version

-60 ns version

(RAS, CAS cycling: tRC = tRC min.)

I

CC6

135

110

90

85

70

60

mA

2) 4)

Self Refresh Current (L-version only)

(CBR cycle with tRAS>TRASSmin, CAS held low,

WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)

I

CC7

400

µA

Capacitance

T

A = 0 to 70 °C,VCC = 3.3 V ± 0.3 V, f = 1 MHz

Parameter

Symbol

Limit Values

Unit

min.

max.

Input capacitance (A0 to A11,A12)

C

I1

–5

pF

Input capacitance (RAS, CAS, WE, OE)

C

I2

–7

pF

I/O capacitance (I/O1-I/O4)

C

IO

–7

pF

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HYB3164405BJ-60 Datasheet(PDF) 8 Page - Siemens Semiconductor Group

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