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RJH60D0DPQ-E0 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJH60D0DPQ-E0 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 10 page RJH60D0DPQ-E0 Preliminary R07DS0737EJ0100 Rev.1.00 Page 4 of 9 Apr 19, 2012 10 8 6 4 2 0 Typical Transfer Characteristics Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Case Temparature (Typical) −25 025 75 125 50 100 150 VCE = 10 V Pulse Test Case Temparature Tc (°C) 1 mA IC = 10 mA Gate to Emitter Voltage VGE (V) 1 3 2 4 5 1 3 2 4 5 48 12 20 16 Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) Gate to Emitter Voltage VGE (V) Tc = 25°C Pulse Test 48 12 20 16 Tc = 150°C Pulse Test IC = 22 A 45 A IC = 22 A 45 A 0 48 12 20 16 0 80 60 40 20 Tc= 25°C 150°C VCE = 10 V Pulse Test Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) −25 025 75 125 50 100 150 Case Temparature Tc (°C) 1.0 1.4 1.2 1.6 2.2 2.0 1.8 2.4 22 A 11 A IC = 45 A VGE = 15 V Pulse Test 20 16 12 8 4 0 Frequency Characteristics (Typical) Frequency f (kHz) 1 100 10 1000 Tj = 125°C, Tc = 90°C, VCE = 400 V VGE = 15 V, Rg = 5 Ω, duty = 50% 0 Collector current wave (Square wave) |
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