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RJH60D0DPQ-E0 Datasheet(PDF) 4 Page - Renesas Technology Corp

Part # RJH60D0DPQ-E0
Description  600V - 22A - IGBT Application: Inverter
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJH60D0DPQ-E0 Datasheet(HTML) 4 Page - Renesas Technology Corp

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RJH60D0DPQ-E0
Preliminary
R07DS0737EJ0100 Rev.1.00
Page 4 of 9
Apr 19, 2012
10
8
6
4
2
0
Typical Transfer Characteristics
Gate to Emitter Voltage VGE (V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
−25
025
75
125
50
100
150
VCE = 10 V
Pulse Test
Case Temparature Tc (°C)
1 mA
IC = 10 mA
Gate to Emitter Voltage VGE (V)
1
3
2
4
5
1
3
2
4
5
48
12
20
16
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
Gate to Emitter Voltage VGE (V)
Tc = 25°C
Pulse Test
48
12
20
16
Tc = 150°C
Pulse Test
IC = 22 A
45 A
IC = 22 A
45 A
0
48
12
20
16
0
80
60
40
20
Tc= 25°C
150°C
VCE = 10 V
Pulse Test
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
−25
025
75
125
50
100
150
Case Temparature Tc (°C)
1.0
1.4
1.2
1.6
2.2
2.0
1.8
2.4
22 A
11 A
IC = 45 A
VGE = 15 V
Pulse Test
20
16
12
8
4
0
Frequency Characteristics (Typical)
Frequency f (kHz)
1
100
10
1000
Tj = 125°C, Tc = 90°C, VCE = 400 V
VGE = 15 V, Rg = 5 Ω, duty = 50%
0
Collector current wave
(Square wave)


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