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RKZ18TWAQEP Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # RKZ18TWAQEP
Description  Silicon Planar Zener Diode for Bi-directional Surge Absorption
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RKZ18TWAQEP Datasheet(HTML) 2 Page - Renesas Technology Corp

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RKZ18TWAQE
Preliminary
R07DS0171EJ0100 Rev.1.00
Page 2 of 4
Sep 21, 2010
Absolute Maximum Ratings
(Ta = 25
C)
Item
Symbol
Value
Unit
Power dissipation
Pd *
200
mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
–55 to +150
C
Note:
Sum for total number of packages. See Fig.2.
Electrical Characteristics *
1
(Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Zener voltage
VZ
16.2
—
19.5
V
IZ = 1 mA, 40 ms pulse
Reverse current
IR
—
—
0.1
A
VR = 13 V
Capacitance
C
—
—
30
pF
VR = 0 V, f = 1 MHz
ESD-Capability *
2
—
30
—
—
kV
C = 150 pF, R = 330
, Both forward
and reverse direction 10 pulse
Notes: 1. Per one device
2. Failure criterion ; IR > 0.1 A at VR = 13 V. (Both direction)


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