Semiconductor Group

2

HYB3164(5)405AJ/AT(L)-40/-50/-60

16M x 4-DRAM

This HYB3164(5)405A is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is

fabricated on an advanced second generation 64Mbit 0,35

µm-CMOS silicon gate process

technology. The circuit and process design allow this device to achieve high performance and low

power dissipation. The HYB3164(5)405A operates with a single 3.3 +/-0.3V power supply and

interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB

3164(5)405A to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These

packages provide high system bit densities and are compatible with commonly used automatic

testing and insertion equipment.The HYB3164(5)405ATL parts have a very low power „sleep mode“

supported by Self Refresh.

Ordering Information

Type

Ordering

Code

Package

Descriptions

8k-refresh versions:

HYB 3164405AJ-40

P-SOJ-32-1

400 mil

DRAM (access time 40 ns)

HYB 3164405AJ-50

P-SOJ-32-1

400 mil

DRAM (access time 50 ns)

HYB 3164405AJ-60

P-SOJ-32-1

400 mil

DRAM (access time 60 ns)

HYB 3164405AT-40

P-TSOPII-32-1

400 mil

DRAM (access time 40 ns)

HYB 3164405AT-50

P-TSOPII-32-1

400 mil

DRAM (access time 50 ns)

HYB 3164405AT-60

P-TSOPII-32-1

400 mil

DRAM (access time 60 ns)

HYB 3164405ATL-50

P-TSOPII-32-1

400 mil

DRAM (access time 50 ns)

HYB 3164405ATL-60

P-TSOPII-32-1

400 mil

DRAM (access time 60 ns)

4k-refresh versions:

HYB 3165405AJ-40

P-SOJ-32-1

400 mil

DRAM (access time 40 ns)

HYB 3165405AJ-50

P-SOJ-32-1

400 mil

DRAM (access time 50 ns)

HYB 3165405AJ-60

P-SOJ-32-1

400 mil

DRAM (access time 60 ns)

HYB 3165405AT-40

P-TSOPII-32-1

400 mil

DRAM (access time 40 ns)

HYB 3165405AT-50

P-TSOPII-32-1

400 mil

DRAM (access time 50 ns)

HYB 3165405AT-60

P-TSOPII-32-1

400 mil

DRAM (access time 60 ns)

HYB 3165405ATL-50

P-TSOPII-32-1

400 mil

DRAM (access time 50 ns)

HYB 3165405ATL-60

P-TSOPII-32-1

400 mil

DRAM (access time 60 ns)