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RJK6018DPM-00-T1 Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # RJK6018DPM-00-T1
Description  Silicon N Channel MOS FET High Speed Power Switching
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK6018DPM-00-T1 Datasheet(HTML) 1 Page - Renesas Technology Corp

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R07DS0131EJ0100 Rev.1.00
Page 1 of 3
Sep 09, 2010
Preliminary Datasheet
RJK6018DPM
Silicon N Channel MOS FET
High Speed Power Switching
Features
 Low on-resistance
RDS(on) = 0.2  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)
 Low leakage current
 High speed switching
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
1. Gate
2. Drain
3. Source
1
2
3
D
G
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
Note4
30
A
Drain peak current
ID (pulse)
Note1
90
A
Body-drain diode reverse drain current
IDR
30
A
Body-drain diode reverse drain peak current
IDR (pulse)
Note1
90
A
Avalanche current
IAP
Note3
6
A
Avalanche energy
EAR
Note3
1.9
mJ
Channel dissipation
Pch
Note2
60
W
Channel to case thermal impedance
ch-c
2.08
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
–55 to +150
C
Notes: 1. PW
 10 s, duty cycle  1%
2. Value at Tc = 25
C
3. STch = 25
C, Tch  150C
4. Limited by maximum safe operation area
R07DS0131EJ0100
Rev.1.00
Sep 09, 2010


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