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RJH60D5DPK-00-T0 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJH60D5DPK-00-T0 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page RJH60D5DPK Preliminary R07DS0163EJ0300 Rev.3.00 Page 4 of 7 Nov 16, 2010 Gate to Emitter Voltage VGE (V) 0 4 2 6 8 0 4 812 20 16 0 4 2 6 8 Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) Gate to Emitter Voltage VGE (V) Ta = 25°C Pulse Test IC = 37 A 75 A 0 4 812 20 16 Ta = 150°C Pulse Test IC = 37 A 75 A Gate to Emitter Voltage VGE (V) Transfer Characteristics (Typical) 0 120 80 40 100 60 20 0123 4 Ta = 25°C 150°C Forward Voltege VF (V) Diode Forward Characteristics (Typical) VCE = 0 V Pulse Test 0 0 4 812 16 VCE = 10 V Pulse Test Ta = 25°C 150°C 150 125 100 75 50 25 |
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