HYB3116405BTL-70 datasheet(7/26 Pages) SIEMENS

Part #	HYB3116405BTL-70

Description	3.3V 4M x 4-Bit EDO-Dynamic RAM

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Semiconductor Group

7

HYB 3116(7)405BJ/BT(L) -50/-60/-70

3.3V 4Mx4-DRAM

Average

VCC supply current, during RAS-only

refresh cycles:

-50 ns version

-60 ns version

-70 ns version

(RAS cycling: CAS =

V

IH,

tRC = tRC min.)

ICC3

–

100(120)

90 (110)

80 (100)

mA

2) 4)

Average

VCC supply current, during hyper page

mode EDO):

-50 ns version

-60 ns version

-70 ns version

(RAS =

V

IL, CAS, address cycling, tPC = tPC min.)

ICC4

–

70 (70)

55 (55)

45 (45)

mA

2) 3) 4)

Standby

VCC supply current

(RAS = CAS =

V

CC – 0.2 V)

ICC5

–1

200

mA

µA

1)

L-version

Average

V

CC supply current, during CAS-

before-RAS refresh mode: -50 ns version

-60 ns version

-70 ns version

(RAS, CAS cycling, tRC = tRC min.)

I

CC6

–

100(120)

90 (110)

80 (100)

mA

2) 4)

Average Self Refresh Current

(CBR cylce with tRAS>TRASSmin., CAS held low,

WE=Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)

I

CC7

_1

250

mA

µAL-version

Capacitance

TA = 0 to 70 °C,VCC = 3.3 V

± 0.3V, f = 1 MHz

Parameter

Symbol

Limit Values

Unit

min.

max.

Input capacitance (A0 to A10, A11)

C

I1

–5pF

Input capacitance (RAS, CAS, WE, OE)

CI2

–7pF

I/O capacitance (I/O1 - I/O4)

C

IO

–7pF

DC Characteristics (values in brackets for HYB3117405)

T

A = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3 V, tT = 2 ns

Parameter

Symbol

Limit Values

Unit Test

Condition

min.

max.

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HYB3116405BTL-70 Datasheet(PDF) 7 Page - Siemens Semiconductor Group

HYB3116405BTL-70 Datasheet(HTML) 7 Page - Siemens Semiconductor Group

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