Semiconductor Group

2

HYB 3116(7)400BJ/BT(L) -50/-60/-70

3.3V 4Mx4-DRAM

The HYB 3116(7)400BJ/BT is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The

HYB 3116(7)400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as

advanced circuit techniques to provide wide operating margins, both internally and for the system

user. Multiplexed address inputs permit the HYB 3116(7)400BJ/BT to be packaged in a standard

SOJ 26/24 300 mil or TSOPII-26/24 300 mil wide plastic package. These packages provide high

system bit densities and are compatible with commonly used automatic testing and insertion

equipment. System-oriented features include single + 3.3 V (± 0.3 V) power supply, direct

interfacing with high-performance logic device families.The HYB3116400BTL parts have a very low

power „sleep mode“ supported by Self Refresh.

Ordering Information

Type

Ordering Code

Package

Descriptions

HYB 3117400BJ-50

P-SOJ-26/24-1 300 mil

DRAM (access time 50 ns)

HYB 3117400BJ-60

P-SOJ-26/24-1 300 mil

DRAM (access time 60 ns)

HYB 3117400BJ-70

P-SOJ-26/24-1 300 mil

DRAM (access time 70 ns)

HYB 3117400BT-50

P-TSOPII-26/24-1 300 mil

DRAM (access time 50 ns)

HYB 3117400BT-60

P-TSOPII-26/24-1 300 mil

DRAM (access time 60 ns)

HYB 3117400BT-70

P-TSOPII-26/24-1 300 mil

DRAM (access time 70 ns)

HYB 3116400BJ-50

P-SOJ-26/24-1 300 mil

DRAM (access time 50 ns)

HYB 3116400BJ-60

P-SOJ-26/24-1 300 mil

DRAM (access time 60 ns)

HYB 3116400BJ-70

P-SOJ-26/24-1 300 mil

DRAM (access time 70 ns)

HYB 3116400BT-50

P-TSOPII-26/24-1 300 mil

DRAM (access time 50 ns)

HYB 3116400BT-60

P-TSOPII-26/24-1 300 mil

DRAM (access time 60 ns)

HYB 3116400BT-70

P-TSOPII-26/24-1 300 mil

DRAM (access time 70 ns)

HYB 3116400BTL-50

P-TSOPII-26/24-1 300 mil

LP-DRAM (access time 50 ns)

HYB 3116400BTL-60

P-TSOPII-26/24-1 300 mil

LP-DRAM (access time 60 ns)

HYB 3116400BTL-70

P-TSOPII-26/24-1 300 mil

LP-DRAM (access time 70 ns)