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NP90N03VHG-E1-AY Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # NP90N03VHG-E1-AY
Description  MOS FIELD EFFECT TRANSISTOR
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP90N03VHG-E1-AY Datasheet(HTML) 3 Page - Renesas Technology Corp

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NP90N03VHG
Chapter Title
R07DS0128EJ0100 Rev.1.00
Page 3 of 6
Sep 24, 2010
Typical Characteristics (TA = 25
°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
0
20
40
60
80
100
120
0
25
50
75
100 125 150 175
TC - Case Temperature -
°C
0
25
50
75
100
125
0
25
50
75
100 125 150 175
TC - Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
0.1
1
10
100
1000
0.1
1
10
100
ID(DC)
ID(pulse)
10 ms
1ms
DC
TC = 25°C
Single Pulse
PW
= 1
i
00
μs
RD
S(o
n)
Lim
ite
d
(V
GS
= 1
i 0
V)
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
0.01
0.1
1
10
100
1000
Single Pulse
Rth(ch-A) = 125°C/W
Rth(ch-C) = 1.43°C/W
PW - Pulse Width - s
100
μ
1 m
10 m
100 m
1
10
100
1000


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