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NESG220033-T1B Datasheet(PDF) 8 Page - Renesas Technology Corp

Part # NESG220033-T1B
Description  NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NESG220033-T1B Datasheet(HTML) 8 Page - Renesas Technology Corp

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Each Input Power Pin (each) (dBm)
VCE = 5 V,
IC (set) = 40 mA,
f1 = 1.000 GHz,
f2 = 1.001 GHz
–50
–80
0
10
20
–10
–20
30
EACH OUTPUT POWER, IM3
vs. EACH INPUT POWER
Pout (each)
IM3
–70
–60
–20
–40
–30
–10
20
0
10
40
30
Input Power Pin (dBm)
COLLECTOR CURRENT vs. INPUT POWER
30
20
10
0
–10
400
200
100
300
0
–20
0
10
–10
20
VCE = 5 V,
IC (set) = 40 mA,
f = 1 GHz
GL
Pout
IC
OUTPUT POWER, LINEAR GAIN,
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
4
3
2
1
0
16
14
12
10
8
6
2
4
1
10
100
VCE = 5 V,
f = 1 GHz,
ZS = ZSopt, ZL = 50
Ω
Ga
NF
0
Collector Current IC (mA)
OUTPUT 3RD ORDER INTERCEPT POINT
vs. COLLECTOR CURRENT
40
30
20
10
0
1
10
100
VCE = 5 V,
f1 = 1.000 GHz,
f2 = 1.001 GHz
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import
of the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave]
→ [Device Parameters]
URL http://www.necel.com/microwave/en/
Data Sheet PU10766EJ03V0DS
6
NESG220033


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