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HYB314100BJ-70 Datasheet(PDF) 9 Page - Siemens Semiconductor Group |
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HYB314100BJ-70 Datasheet(HTML) 9 Page - Siemens Semiconductor Group |
9 / 23 page Semiconductor Group 9 HYB 314100BJ/BJL-50/-60/-70 3.3V 4M x 1 DRAM Fast Page Mode Read-Modify-Write Cycle Fast page mode read-write cycle time t PRWC 55 – 60 – 70 – ns CAS precharge to WE t CPWD 30 – 35 – 40 – ns CAS-before-RAS refresh cycle CAS setup time t CSR 10 – 10 – 10 – ns CAS hold time t CHR 10 – 10 – 10 – ns RAS to CAS precharge time t RPC 5–5–5–ns Write to RAS precharge time t WRP 10 – 10 – 10 – ns Write hold time referenced to RAS t WRH 10 – 10 – 10 – ns CAS-before-RAS counter test cycle CAS precharge time t CPT 35 – 40 – 40 – ns Test Mode Write command setup time t WTS 10 – 10 – 10 – ns Write command hold time t WTH 10 – 10 – 10 – ns AC Characteristics (cont’d) 5)6) T A = 0 to 70 ˚C, VCC = 3.3 V ± 0.3 V, tT = 5 ns Parameter Symbol Limit Values Unit Note -50 -60 -70 min. max. min. max. min. max. |
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