HYB314100BJ-70 datasheet(9/23 Pages) SIEMENS

Part #	HYB314100BJ-70

Description	4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

9

HYB 314100BJ/BJL-50/-60/-70

3.3V 4M x 1 DRAM

Fast Page Mode Read-Modify-Write Cycle

Fast page mode read-write cycle

time

t

PRWC

55

–

60

–

70

–

ns

CAS precharge to WE

t

CPWD

30

–

35

–

40

–

ns

CAS-before-RAS refresh cycle

CAS setup time

t

CSR

10

–

10

–

10

–

ns

CAS hold time

t

CHR

10

–

10

–

10

–

ns

RAS to CAS precharge time

t

RPC

5–5–5–ns

Write to RAS precharge time

t

WRP

10

–

10

–

10

–

ns

Write hold time referenced to

RAS

t

WRH

10

–

10

–

10

–

ns

CAS-before-RAS counter test

cycle

CAS precharge time

t

CPT

35

–

40

–

40

–

ns

Test Mode

Write command setup time

t

WTS

10

–

10

–

10

–

ns

Write command hold time

t

WTH

10

–

10

–

10

–

ns

AC Characteristics (cont’d) 5)6)

T

A = 0 to 70 ˚C, VCC = 3.3 V ± 0.3 V, tT = 5 ns

Parameter

Symbol

Limit Values

Unit

Note

-50

-60

-70

min.

max. min.

max.

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HYB314100BJ-70 Datasheet(PDF) 9 Page - Siemens Semiconductor Group

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