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HYB3116160BST-60 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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HYB3116160BST-60 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 25 page Semiconductor Group 2 HYB3116(8)160BSJ/BST(L)-50/-60/-70 3.3V 1M x 16-DRAM The HYB 3116(8)160BSJ/BST is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits. The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 3116(8)160BSJ/BST to be packaged in standard SOJ-42 and TSOPII-50/44 plastic package with 400mil width. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. System-oriented features include single + 3.3 V ( ± 0.3 V) power supply, direct interfacing with high- performance logic device families.The HYB3116160BSTL parts have a very low power „sleep mode“ suppported by Self Refresh. Ordering Information Pin Names Type Ordering Code Package Descriptions HYB 3116160BSJ-50 on request P-SOJ-42 400 mil DRAM (access time 50 ns) HYB 3116160BSJ-60 on request P-SOJ-42 400 mil DRAM (access time 60 ns) HYB 3116160BSJ-70 on request P-SOJ-42 400 mil DRAM (access time 70 ns) HYB 3118160BSJ-50 on request P-SOJ-42 400 mil DRAM (access time 50 ns) HYB 3118160BSJ-60 on request P-SOJ-42 400 mil DRAM (access time 60 ns) HYB 3118160BSJ-70 on request P-SOJ-42 400 mil DRAM (access time 70 ns) HYB 3116160BST-50 on request P-TSOPII-50/44 400 mil DRAM (access time 50 ns) HYB 3116160BST-60 on request P-TSOPII-50/44 400 mil DRAM (access time 60 ns) HYB 3116160BST-70 on request P-TSOPII-50/44 400 mil DRAM (access time 70 ns) HYB 3118160BST-50 on request P-TSOPII-50/44 400 mil DRAM (access time 50 ns) HYB 3118160BST-60 on request P-TSOPII-50/44 400 mil DRAM (access time 60 ns) HYB 3118160BST-70 on request P-TSOPII-50/44 400 mil DRAM (access time 70 ns) A0 to A9 Row Address Inputs for 1k-refresh version HYB3118160BSJ/BST A0 to A9 Column Addess Inputs for 1k-refresh version HYB3118160BSJ/BST A0 to A11 Row Address Inputs for 4k-refresh version HYB3116160BSJ/BST A0 to A7 Column Address Inputs for 4k-refresh version HYB3116160BSJ/BST RAS Row Address Strobe OE Output Enable I/O1-I/O16 Data Input/Output UCAS Upper Column Address Strobe LCAS Lower Column Address Strobe WE Read/Write Input VCC Power Supply (+ 3.3 V) VSS Ground (0 V) N.C. not connected |
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