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HYB314100BJBJL-50- Datasheet(PDF) 6 Page - Siemens Semiconductor Group |
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HYB314100BJBJL-50- Datasheet(HTML) 6 Page - Siemens Semiconductor Group |
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Semiconductor Group 6 HYB 314100BJ/BJL-50/-60/-70 3.3V 4M x 1 DRAM Average V CC supply current during CAS before RAS refresh mode -50 version -60 version -70 version I CC6 – – – 70 60 55 mA 2)4) For Low Power Version only: Battery backup current (average power supply current in battery backup mode): (CAS = CAS before RAS cycling or 0.2 V, WE = V CC – 0.2 V or 0.2 V, A0 to A10 = V CC – 0.2 V or 0.2 V; DI = V CC – 0.2 V or 0.2 V or open, t RC = 125 µs, tRAS = tRAS min = 1 µs) I CC7 – 250 µA– Capacitance T A = 0 to 70 ˚C; VCC = 3.3 V ± 0.3 V; f = 1 MHz Parameter Symbol Limit Values Unit min. max. Input capacitance (A0 to A10, DI) C I1 –5pF Input capacitance (RAS, CAS, WE) C I2 –7pF Output capacitance (DO) C IO –7pF DC Characteristics (cont’d) T A = 0 to 70 ˚C, VSS = 0 V, VCC = 3.3 V ± 0.3 V , tT = 5 ns Parameter Symbol Limit Values Unit Test Condition min. max. |
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