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HYB314100BJBJL-50- Datasheet(PDF) 6 Page - Siemens Semiconductor Group

Part No. HYB314100BJBJL-50-
Description  4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB314100BJBJL-50- Datasheet(HTML) 6 Page - Siemens Semiconductor Group

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Semiconductor Group
6
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Average
V
CC supply current during
CAS before RAS refresh mode
-50 version
-60 version
-70 version
I
CC6
70
60
55
mA
2)4)
For Low Power Version only:
Battery backup current (average power supply
current in battery backup mode):
(CAS = CAS before RAS cycling or 0.2 V,
WE =
V
CC – 0.2 V or 0.2 V,
A0 to A10 =
V
CC – 0.2 V or 0.2 V;
DI =
V
CC – 0.2 V or 0.2 V or open,
t
RC = 125 µs, tRAS = tRAS min = 1 µs)
I
CC7
250
µA–
Capacitance
T
A = 0 to 70 ˚C; VCC = 3.3 V ± 0.3 V; f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A10, DI)
C
I1
–5pF
Input capacitance (RAS, CAS, WE)
C
I2
–7pF
Output capacitance (DO)
C
IO
–7pF
DC Characteristics (cont’d)
T
A = 0 to 70 ˚C, VSS = 0 V, VCC = 3.3 V ± 0.3 V , tT = 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.


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