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HYB314100BJBJL-50- Datasheet(PDF) 5 Page - Siemens Semiconductor Group

Part No. HYB314100BJBJL-50-
Description  4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
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Maker  SIEMENS [Siemens Semiconductor Group]
Homepage  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB314100BJBJL-50- Datasheet(HTML) 5 Page - Siemens Semiconductor Group

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Semiconductor Group
5
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 ˚C
Storage temperature range......................................................................................– 55 to + 150 ˚C
Input/output voltage ........................................................................... – 1 to + min (
V
CC + 0.5, 4.6) V
Power Supply voltage .................................................................................................. – 1 to + 4.6 V
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
T
A = 0 to 70 ˚C, VSS = 0 V, VCC = 3.3 V ± 0.3 V , tT = 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
Input high voltage
V
IH
2.0
V
CC + 0.5
V
1)
Input low voltage
V
IL
– 1.0
0.8
V
1)
TTL Output high voltage (
I
OUT = – 2 mA)
V
OH
2.4
V
1)
TTL Output low voltage (
I
OUT = 2 mA)
V
OL
0.4
V
1)
CMOS Output high voltage (
I
OUT = – 100 µA)
V
OH
V
CC – 0.2
V
CMOS Output low voltage (
I
OUT = 100 µA)
V
OL
0.2
V
Input leakage current, any input
(0 V <
V
in < VCC + 0.3 V, all other input = 0 V)
I
I(L)
– 10
10
µA
1)
Output leakage current
(DO is disabled, 0 V <
V
OUT < VCC)
I
O(L)
– 10
10
µA
1)
Average
V
CC supply current
-50 version
-60 version
-70 version
I
CC1
_
70
60
55
mA
2) 3)4)
Standby
V
CC supply current
(RAS = CAS = WE =
V
IH)
I
CC2
–2mA
Average
V
CC supply current during RAS-only
refresh cycles
-50 version
-60 version
-70 version
I
CC3
_
70
60
55
mA
2)4)
Average
V
CC supply current during fast page
mode operation
-50 version
-60 version
-70 version
I
CC4
50
45
40
mA
2) 3)4)
Standby
V
CC supply current
(RAS = CAS = WE =
V
CC – 0.2 V)
I
CC5
–1
200
mA
µA
1)
L-version


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