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HYB3117800BSJ-60 Datasheet(PDF) 6 Page - Siemens Semiconductor Group

Part # HYB3117800BSJ-60
Description  2M x 8-Bit Dynamic RAM
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

HYB3117800BSJ-60 Datasheet(HTML) 6 Page - Siemens Semiconductor Group

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Semiconductor Group
6
HYB 3117800BSJ-50/-60/-70
2M x 8-DRAM
Average
VCC supply current,
during fast page mode:
-50 ns version
-60 ns version
-70 ns version
(RAS =
V
IL, CAS, address cycling,tPC = tPC min.)
ICC4
–
–
–
40
35
30
mA
mA
mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
Standby
VCC supply current
(RAS = CAS =
VCC – 0.2 V)
ICC5
–1mA
1)
Average
V
CC supply current, during CAS-
before-RAS refresh mode: -50 ns version
-60 ns version
-70 ns version
(RAS, CAS cycling, tRC = tRC min.)
I
CC6
–
–
–
120
110
100
mA
mA
mA
2) 4)
2) 4)
2) 4)
Average Self Refresh Current
(CBR cycle with tRAS>TRASSmin., CAS held low,
WE=Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
I
CC7
_1mA
Capacitance
TA = 0 to 70 °C,VCC = 3.3 V
± 0.3V, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A10)
C
I1
–5pF
Input capacitance (RAS, CAS, WE, OE)
CI2
–7pF
I/O capacitance (I/O1-I/O8)
C
IO
–7pF
DC Characteristics (cont’d)
T
A = 0 to 70 °C, VSS = 0 V, VCC = 3.3 V ± 0.3V, tT = 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.


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