SI7703EDN_08 datasheet(2/13 Pages) VISHAY

Part #	SI7703EDN

Description	Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

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Document Number: 71429

S-83043-Rev. C, 22-Dec-08

Vishay Siliconix

Si7703EDN

Notes

a. Surface Mounted on 1" x 1" FR4 board.

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter

Device

Symbol

Typical

Maximum

Unit

Junction-to-Ambienta

t

≤ 10 s

MOSFET

RthJA

35

44

°C/W

Schottky

51

64

Steady State

MOSFET

75

94

Schottky

91

115

Junction-to-Case (Drain)

Steady State

MOSFET

RthJC

45

Schottky

10

12

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 800 µA

- 0.45

- 1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 4.5 V

± 1.5

µA

VDS = 0 V, VGS = ± 12 V

± 100

mA

Zero Gate Voltage Drain Current

IDSS

VDS = - 20 V, VGS = 0 V

- 1

µA

VDS = - 20 V, VGS = 0 V, TJ = 85 °C

- 5

On-State Drain Currenta

ID(on)

VDS ≤ - 5 V, VGS = - 4.5 V

- 20

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 4.5 V, ID = - 6.3 A

0.041

0.048

Ω

VGS = - 2.5 V, ID = - 5.3 A

0.057

0.068

VGS = - 1.8 V, ID = - 1 A

0.072

0.090

Forward Transconductancea

gfs

VDS = - 10 V, ID = - 6.3 A

14

S

Diode Forward Voltagea

VSD

IS = - 2.3 A, VGS = 0 V

- 0.8

- 1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = - 10 V, VGS = - 4.5 V, ID = - 6.3 A

12

18

nC

Gate-Source Charge

Qgs

2.5

Gate-Drain Charge

Qgd

2.9

Turn-On Delay Time

td(on)

VDD = - 10 V, RL = 10 Ω

ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω

2.5

4

νs

Rise Time

tr

46

Turn-Off DelayTime

td(off)

15

23

Fall Time

tf

12

18

SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Forward Voltage Drop

VF

IF = 0.5 A

0.42

0.48

V

IF = 0.5 A, TJ = 125 °C

0.33

0.4

Maximum Reverse Leakage Current

Irm

Vr = 20 V

0.002

0.100

mA

Vr = 20 V, TJ = 85 °C

0.10

1

Vr = 20 V, TJ = 125 °C

1.5

10

Junction Capacitance

CT

Vr = 10 V

31

pF

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