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RJP6065DPM Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJP6065DPM
Description  Silicon N Channel IGBT High Speed Power Switching
Download  8 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJP6065DPM Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJP6065DPM
Preliminary
R07DS0204EJ0100 Rev.1.00
Page 3 of 7
Nov 19, 2010
Main Characteristics
Typical Output Characteristics
100
80
60
40
20
123
45
0
0
Collector to Emitter Voltage VCE (V)
100
80
60
40
20
0
10
8
6
4
2
0
Pulse Test
Ta = 25°C
9 V
V
GE = 6 V
6.5 V
8.5 V
7 V
7.5 V
8 V
15 V
10 V
0
48
12
20
16
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
40 A
Pulse Test
Ta = 25°C
Gate to Emitter Voltage VGE (V)
Typical Transfer Characteristics
02
468
10
VCE = 10 V
Pulse Test
Gate to Emitter Voltage VGE (V)
25°C
75°C
–25
°C
Tc = 125
°C
Collector to Emitter Voltage VCE (V)
Maximum Safe Operation Area
1000
100
1
10
0.01
0.1
0.1
1
100
10
1000
Tc = 25
°C
Single pulse
PW
=
10
μs
IC = 20 A
60 A
Case Temperature Tc (°C)
Maximum DC Collector Current vs.
Case Temperature
02550
100
75
125 150175
02550
100
75
125 150175
Case Temperature Tc (°C)
Collector Dissipation vs.
Case Temperature
60
50
40
30
20
10
0
60
50
40
30
20
10
0


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