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RJP63F3DPP-M0 Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # RJP63F3DPP-M0
Description  Silicon N Channel IGBT High Speed Power Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJP63F3DPP-M0 Datasheet(HTML) 3 Page - Renesas Technology Corp

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RJP63F3DPP-M0
Preliminary
R07DS0321EJ0200 Rev.2.00
Page 3 of 6
May 26, 2011
Main Characteristics
Typical Output Characteristics (2)
Typical Transfer Characteristics
200
160
120
80
40
2468
10
Typical Output Characteristics (1)
100
80
60
40
20
12345
Collector Current IC (A)
Maximum Safe Operation Area
1000
100
10
1
10
100
1
0.01
0.1
1000
0
20
40
60
80
100
0
0
0
0
0
2468
10
10 μ
s
0
2
6
4
8
048
12
20
16
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
80 A
40 A
0.1
1
10
1
10
100
75°C
Tc = 125
°C
Pulse Test
Ta = 25°C
VGE = 15 V
Pulse Test
VCE = 10 V
Pulse Test
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Gate to Emitter Voltage VGE (V)
Gate to Emitter Voltage VGE (V)
Ta = 25°C
1 shot pulse
75°C
Pulse Test
Ta = 25°C
Pulse Test
Ta = 25°C
6 V
5.5 V
V
GE = 5 V
V
GE = 5 V
6 V
6.5 V
5.5 V
7 V
7.5 V
8.5 V
8 V
10 V
15 V
9 V
6.5 V
7.5 V
8 V
7 V
15 V
10 V
IC = 120 A
Tc = 125
°C
25°C
12 V
25°C


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