RJP60D0DPE datasheet(1/7 Pages) RENESAS

Part #	RJP60D0DPE

Description	Silicon N Channel IGBT High Speed Power Switching

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Manufacturer	RENESAS [Renesas Technology Corp]

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R07DS0172EJ0100 Rev.1.00

Page 1 of 6

Nov 15, 2010

Preliminary Datasheet

RJP60D0DPE

Silicon N Channel IGBT

High Speed Power Switching

Features

 Short circuit withstand time (5 s typ.)

 Low collector to emitter saturation voltage

VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25°C)

 Gate to emitter voltage rating 30 V

 Pb-free lead plating and chip bonding

Outline

1. Gate

2. Collector

3. Emitter

4. Collecotor

C

G

E

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (S)-(1) )

1

2

3

4

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to emitter voltage

VCES

600

V

Gate to emitter voltage

VGES

±30

V

Tc = 25°C

IC

45

A

Collector current

Tc = 100°C

IC

22

A

Collector peak current

ic(peak)

Note1

90

A

Collector dissipation

PC

Note2

122

W

Junction to case thermal impedance

j-c Note2

1.02

°C/ W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

 10 s, duty cycle  1%

2. Value at Tc = 25

C

R07DS0172EJ0100

Rev.1.00

Nov 15, 2010

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